Final-state excitations in the photoluminescence spectra ofInxGa1−xAs-InP quantum wells at low and high carrier density

1994 ◽  
Vol 50 (16) ◽  
pp. 11771-11782 ◽  
Author(s):  
M. S. Skolnick ◽  
K. J. Nash ◽  
M. K. Saker ◽  
S. J. Bass
2014 ◽  
Vol 22 (S2) ◽  
pp. A491 ◽  
Author(s):  
Jūras Mickevičius ◽  
Jonas Jurkevičius ◽  
Gintautas Tamulaitis ◽  
Michael S. Shur ◽  
Max Shatalov ◽  
...  

1998 ◽  
Vol 76 (2) ◽  
pp. 105-110
Author(s):  
S S De ◽  
A K Ghosh ◽  
M Bera

Some physical characteristics of photoluminescence spectra in GaAs--(Ga,Al)As quantum-wells under steady optical excitation conditions are presented. They are based on the dependence of photoluminescence on laser intensity. The variations of carrier density with laser intensity and electron--hole recombination decay time are compared with earlier experimental results. PACS Nos. 73.20 Dx, 73.20 Mf


1999 ◽  
Vol 74 (22) ◽  
pp. 3359-3361 ◽  
Author(s):  
C. Jordan ◽  
J. F. Donegan ◽  
J. Hegarty ◽  
B. J. Roycroft ◽  
S. Taniguchi ◽  
...  

1993 ◽  
Vol 184 (1-4) ◽  
pp. 211-215 ◽  
Author(s):  
M. van der Burgt ◽  
A. Van Esch ◽  
F.M. Peeters ◽  
M. Van Hove ◽  
G. Borghs ◽  
...  

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