Valence-band density of states of near-noble-metal (Ni,Pd,Pt) monosilicides by using soft-x-ray-emission spectroscopy

1994 ◽  
Vol 50 (16) ◽  
pp. 11564-11569 ◽  
Author(s):  
S. Yamauchi ◽  
S. Kawamoto ◽  
M. Hirai ◽  
M. Kusaka ◽  
M. Iwami ◽  
...  
1993 ◽  
Vol 32 (Part 2, No. 4B) ◽  
pp. L597-L600 ◽  
Author(s):  
Satoshi Kawamoto ◽  
Masaaki Hirai ◽  
Masahiko Kusaka ◽  
Hatsuo Nakamura ◽  
Motohiro Iwami ◽  
...  

1998 ◽  
Vol 67 (1) ◽  
pp. 230-233 ◽  
Author(s):  
Jinliang Wang ◽  
Masaaki Hirai ◽  
Masahiko Kusaka ◽  
Motohiro Iwami

1994 ◽  
Vol 63 (11) ◽  
pp. 4097-4101 ◽  
Author(s):  
Megumi Kasaya ◽  
Shoichi Yamauchi ◽  
Masaaki Hirai ◽  
Masahiko Kusaka ◽  
Motohiro Iwami ◽  
...  

2005 ◽  
Vol 98 (1) ◽  
pp. 013704 ◽  
Author(s):  
L. Zhang ◽  
I. Konovalov ◽  
D. Wett ◽  
D. Schulze ◽  
R. Szargan ◽  
...  

1986 ◽  
Vol 33 (4) ◽  
pp. 2370-2379 ◽  
Author(s):  
H. Winter ◽  
P. J. Durham ◽  
W. M. Temmerman ◽  
G. M. Stocks

1991 ◽  
Vol 30 (Part 1, No. 9A) ◽  
pp. 1928-1930 ◽  
Author(s):  
Hirokuni Watabe ◽  
Motohiro Iwami ◽  
Masaaki Hirai ◽  
Masahiko Kusaka ◽  
Hatsuo Nakamura

2010 ◽  
Vol 297-301 ◽  
pp. 849-852
Author(s):  
Toshio Takeuchi ◽  
Jiro Nishinaga ◽  
Atsushi Kawaharazuka ◽  
Yoshiji Horikoshi

High resolution X-ray photoelectron spectroscopy (XPS) is used to investigate the spectra of nanolayered films. Amorphous gallium oxide (Ga2O3)-silicon dioxide (SiO2) nanolayered thin films are grown using ultrahigh vacuum radio frequency (rf) magnetron sputtering on sapphire substrates at room temperature. Films are layered with 15-angstrom Ga2O3 oxide and 75-angstrom SiO2 for a total of 10 layers. Referring to atomic core levels, atomic contribution to valence band density of states is experimentally nominated. This analytical technique has particular applicability to the evaluation of the density of states with atomic contributions.


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