Thermal-mismatch-strain relaxation in epitaxialCaF2,BaF2/CaF2, and PbSe/BaF2/CaF2layers on Si(111) after many temperature cycles

1994 ◽  
Vol 50 (15) ◽  
pp. 10801-10810 ◽  
Author(s):  
H. Zogg ◽  
S. Blunier ◽  
A. Fach ◽  
C. Maissen ◽  
P. Müller ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Thermal Mismatch ◽  
Temperature Cycles ◽  
Mismatch Strain

Thermal Mismatch Strain Relaxation Mechanisms and Hysteresis in Pb1−SnxSe-on-CaF2/Si Structures

1995 ◽  
Vol 379 ◽  
Author(s):  
H. Zogg ◽  
P. Müller ◽  
A. Fach ◽  
J. John ◽  
C. Paglino ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Structural Quality ◽  
Threading Dislocation ◽  
Misfit Dislocations ◽  
Thermal Mismatch ◽  
Mismatch Strain ◽  
Threading Dislocation Density ◽  
Deformation Hardening ◽  
Interaction Probability

ABSTRACTThe strain induced by the thermal mismatch in Pbl−xSnxSe and other IV–VI compound layers on Si(111)-substrates relaxes by glide of dislocations in the main <110> {001}-glide system. The glide planes are arranged with 3-fold symmetry and inclined to the (111)-surface. Despite a high threading dislocation density (> 107 cm−2) in these heavily lattice mismatched structures, the misfit dislocations move easily even at cryogenic temperatures and after many temperature cycles between RT and 77K. The cumulative plastic deformation after these cycles is up to 500%! Despite a pronounced deformation hardening occurs, the structural quality of the layer is only slightly adversely affected as regards additional threading dislocations created. The interaction probability between these dislocations is estimated to be about 10−5.

Thermal-mismatch strain relaxation mechanisms in heteroepitaxial lead chalcogenide layers on Si substrates

1993 ◽  
Vol 8 (1S) ◽  
pp. S337-S341 ◽  
Author(s):  
H Zogg ◽  
C Maissen ◽  
S Blunier ◽  
S Teodoropol ◽  
R M Overney ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Lead Chalcogenide ◽  
Thermal Mismatch ◽  
Si Substrates ◽  
Mismatch Strain

Thermal mismatch strain induced disorder of Y2Mo3O12 and its effect on thermal expansion of Y2Mo3O12/Al composites

2017 ◽  
Vol 19 (19) ◽  
pp. 11778-11785 ◽  
Author(s):  
Chang Zhou ◽  
Qiang Zhang ◽  
Saiyue Liu ◽  
Bingcheng Luo ◽  
Eongyu Yi ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
Squeeze Casting ◽  
Thermal Mismatch ◽  
Mismatch Strain

Fully dense Y2Mo3O12/Al composites were prepared by squeeze casting.

The interfacial reliability of through-glass vias for 2.5D integrated circuits

2020 ◽  
Vol 37 (4) ◽  
pp. 181-188
Author(s):  
Omar Ahmed ◽  
Golareh Jalilvand ◽  
Scott Pollard ◽  
Chukwudi Okoro ◽  
Tengfei Jiang
Keyword(s):  
Integrated Circuits ◽  
Material Selection ◽  
Thermal Mismatch ◽  
Element Analysis ◽  
Content Type ◽  
Interfacial Delamination ◽  
Mismatch Strain ◽  
Aspect Ratios ◽  
Interfacial Reliability ◽  
The Impact

Purpose Glass is a promising interposer substrate for 2.5 D integration; yet detailed analysis of the interfacial reliability of through-glass vias (TGVs) has been lacking. The purpose of this paper is to investigate the design and material factors responsible for the interfacial delamination in TGVs and identify methods to improve reliability. Design/methodology/approach The interfacial reliability of TGVs is studied both analytically and numerically. An analytical solution is presented to show the dependence of the energy release rate (ERR) for interfacial delamination on the via design and the thermal mismatch strain. Then, finite element analysis (FEA) is used to investigate the influence of detailed design and material factors, including the pitch distance, via aspect ratio, via geometry and the glass and via materials, on the susceptibility to interfacial delamination. Findings ERR for interfacial delamination is directly proportional to the via diameter and the thermal mismatch strain. Thinner wafers with smaller aspect ratios show larger ERRs. Changing the via geometry from a fully filled via to an annular via leads to lower ERR. FEA results also show that certain material combinations have lower thermal mismatch strains, thus less prone to delamination. Practical implications The results and approach presented in this paper can guide the design and development of more reliable 2.5 D glass interposers. Originality/value This paper represents the first attempt to comprehensively evaluate the impact of design and material selection on the interfacial reliability of TGVs.

Stability and Metastability in Semiconductor Strained-Layer Structures

1987 ◽  
Vol 103 ◽  
Author(s):  
Brian W. Dodson ◽  
I. J. Fritz ◽  
S. Thomas Picraux ◽  
Jeffrey Y. Tsao
Keyword(s):  
Experimental Data ◽  
Plastic Deformation ◽  
Structural Relaxation ◽  
Strain Relaxation ◽  
Dislocation Dynamics ◽  
Strained Layer ◽  
Stability Properties ◽  
Mismatch Strain ◽  
Layer Structures ◽  
Standard Models

ABSTRACTThe physics governing stability properties and relaxation of mismatch strain in semiconductor strained-layer structures is reviewed. Experimental data on stability and rates of strain relaxation are examined. We conclude that essentially all observations on structural relaxation of semiconductor strained-layer structures can be explained by standard models of plastic deformation adapted to the special conditions controlling dislocation dynamics in these structures.

Epitaxial tilt of partially relaxed InGaAs layers grown on (100) GaAs substrates

1992 ◽  
Vol 70 (10-11) ◽  
pp. 838-842
Author(s):  
P. Maigné ◽  
A. P. Roth ◽  
C. Desruisseaux ◽  
D. Coulas
Keyword(s):  
Residual Strain ◽  
Gaas Substrate ◽  
Strain Relaxation ◽  
Azimuthal Angle ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Monoclinic Symmetry ◽  
X Ray ◽  
Mismatch Strain ◽  
Gaas Substrates

The structural properties of partially relaxed InxGa1−xAs layers grown on (100) GaAs substrates have been investigated, using high-resolution X-ray diffraction, in order to better understand the mechanisms responsible for the relaxation of the mismatch strain. From symmetric [400] reflections recorded as functions of the azimuthal angle [Formula: see text], the (100) InGaAs planes are found to be tilted with respect to the (100) GaAs substrate planes. The tilt magnitude is first seen to decrease then to increase with layer thickness. The direction of the tilt changes from [01-1] to [00-1] in the range of thickness investigated. From [422] asymmetric reflections, the average in-plane lattice parameter, the indium composition as well as the percentage of relaxation can be measured. Our values for relaxation are in qualitative agreement with the Dodson and Tsao model of strain relaxation (Appl. Phys. Lett. 51, 1710 (1987)). In addition, our data show an anisotropy in residual strain along <011> directions. This anisotropy increases with the amount of strain relieved and changes the crystal symmetry of the cell from tetragonal to monoclinic. This monoclinic symmetry can be characterized by an angle β that measures the angle between 90° and the inner angles of the new crystallographic cell. As for the anisotropy in residual strain, |3 increases with the amount of strain relieved. Correlations between tilt magnitude and tilt direction with the formation of 60° type dislocations are discussed.

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