scholarly journals Kinetic inductance and penetration depth of thin superconducting films measured by THz-pulse spectroscopy

1994 ◽  
Vol 49 (9) ◽  
pp. 6185-6187 ◽  
Author(s):  
S. D. Brorson ◽  
R. Buhleier ◽  
J. O. White ◽  
I. E. Trofimov ◽  
H.-U. Habermeier ◽  
...  
Keyword(s):  
Penetration Depth ◽  
Superconducting Films ◽  
Kinetic Inductance ◽  
Pulse Spectroscopy ◽  
Thin Superconducting Films

Resistance transitions of thin superconducting films in magnetic fields

1962 ◽  
Vol 267 (1329) ◽  
pp. 231-243 ◽  
Keyword(s):  
Magnetic Fields ◽  
Penetration Depth ◽  
Edge Effects ◽  
Superconducting Films ◽  
Tin Films ◽  
Normal Resistance ◽  
Perpendicular Field ◽  
Theoretical Considerations ◽  
Effective Penetration ◽  
Thin Superconducting Films

Resistance transitions of tin films with thicknesses in the range 600 to 10 000 Å have been studied in parallel and perpendicular magnetic fields. The transitions in perpendicular fields are surprisingly sharp, show no sign of a tail at low fields, and are comparatively insensitive to edge effects. The perpendicular field necessary to restore the full normal resistance ( H ⊥ ) is never very different from the bulk critical field ( H c ) even for films as thin as 600 Å. The sharpness of the transition is apparently due to the persistence of a continuous superconducting thread long after the film has become almost completely normal. Simple theoretical considerations suggest that H ⊥ exceeds H c only if the effective penetration depth λ Є exceeds the coherence distance

Penetration of magnetic fields into superconductors III. Measurements on thin films of tin, lead and indium

1951 ◽  
Vol 208 (1094) ◽  
pp. 391-408 ◽  
Keyword(s):  
Penetration Depth ◽  
Low Temperatures ◽  
Experimental Error ◽  
Unit Area ◽  
Magnetic Moments ◽  
Superconducting Films ◽  
Free Surfaces ◽  
High Fields ◽  
The Difference ◽  
Thin Superconducting Films

The magnetic moments of thin superconducting films of tin, lead and indium, obtained by evaporation of the metal in vacuo, have been measured by a ballistic method. Values of the penetration depth, λ 0 , at absolute zero, derived from them by extrapolation, are estimated as 5.0 ± 0.1 x 10 -6 cm. for tin, 3.9 ± 0.3 x 10 -6 cm. for lead, and 6.4 ± 0.3 cm. for indium. Within the limits of experimental error the results agree with the penetration law of London & London. From the areas of the magnetization curves, estimates of the difference in surface energy (α n – α 5 ) per unit area between free surfaces of the normal and superconducting phases respectively are derived, which are smaller than those previously assumed. No evidence is found for an increase in penetration depth at low temperatures and high fields such as that suggested by the theories of Heisenberg and Koppe.

Nonthermal kinetic inductance photoresponse of thin superconducting films

1995 ◽  
Vol 5 (2) ◽  
pp. 2595-2598 ◽  
Author(s):  
M.A. Heusinger ◽  
A.D. Semenov ◽  
R.S. Nebosis ◽  
Y.P. Gousev ◽  
K.F. Renk
Keyword(s):  
Superconducting Films ◽  
Kinetic Inductance ◽  
Thin Superconducting Films

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

Electron energy down-conversion in thin superconducting films

2007 ◽  
Vol 75 (9) ◽  
Author(s):  
A. G. Kozorezov ◽  
J. K. Wigmore ◽  
D. Martin ◽  
P. Verhoeve ◽  
A. Peacock
Keyword(s):  
Electron Energy ◽  
Superconducting Films ◽  
Down Conversion ◽  
Thin Superconducting Films

Superconductors with spin–orbit interactions

2016 ◽  
Vol 30 (25) ◽  
pp. 1650183 ◽  
Author(s):  
Yu. N. Ovchinnikov
Keyword(s):  
Magnetic Field ◽  
Superconducting Films ◽  
Critical Magnetic Field ◽  
Spin Orbit ◽  
Zero Temperature ◽  
Interband Pairing ◽  
Two Parameters ◽  
Spin Orbit Interactions ◽  
Parameter Values ◽  
Thin Superconducting Films

The effect of spin-orbit (SO) interaction on the formation of the critical states in thin superconducting films in magnetic field oriented along the film is investigated. Hereby, the case of interband pairing is considered. It was found that eight branches exist in the plane of two parameters [Formula: see text] determined by the value of magnetic field and SO interaction. Six modes leads to inhomogeneous states with different values of the impulse [Formula: see text]. Each state is doubly degenerate over direction of impulse [Formula: see text]. The parameter values at critical point are found for all eight branches in explicit form for zero temperature. The optimal two branches are estimated, corresponding to largest critical magnetic field value for given SO interaction.

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