The features of ac magnetic susceptibility in thin superconducting films with a high critical current

2013 ◽  
Vol 39 (12) ◽  
pp. 1008-1017 ◽  
Author(s):  
M. P. Chornomorets ◽  
D. G. Kovalchuk
Keyword(s):  
Magnetic Susceptibility ◽  
Critical Current ◽  
Superconducting Films ◽  
Ac Magnetic Susceptibility ◽  
Thin Superconducting Films

scholarly journals Improvement of superconducting parameters of Bi1.6Pb0.4Sr 2Ca 2Cu 3O10+ δ added with Au nanoparticles

2018 ◽  
Vol 16 (38) ◽  
Author(s):  
Amal K. Jassim
Keyword(s):  
Electrical Resistivity ◽  
Magnetic Susceptibility ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Au Nanoparticles ◽  
Ac Magnetic Susceptibility ◽  
Critical Temperatures ◽  
Magnetization Measurements ◽  
Dc Electrical Resistivity

Samples of Bi1.6Pb0.4Sr2Ca2Cu3O10+δ superconductor were prepared by solid-state reaction method to study the effects of gold nanoparticles addition to the superconducting system, Nano-Au was introduced by small weight percentages (0.25, 0.50, 0.75, 1.0, and 1.25 weight %). Phase identification and microstructuralcharacterization of the samples were investigated using XRD and SEM. Moreover, DC electrical resistivity as a function of the temperature, critical current density Jc, AC magnetic susceptibility, and DC magnetization measurements were carried to evaluate the relative performance of samples. x-ray diffraction analysis showed that both (Bi,Pb)-2223 and Bi-2212 phases coexist in the samples having an orthorhombic crystal structure. Both the onset critical temperatures Tc (onset) and zero electrical resistivity critical temperatures Tc (R=0) of the samples were determined from the DC electrical resistivity measurements. An improvement of the superconducting transition temperature of 6.36 % was obtained with increasing Au nanoparticles to x = 1.25 wt.%, while the critical current density is improved by 220 %. AC magnetic susceptibility measurement showed that the diamagnetic fraction and intergranular coupling of the x = 1.25 wt.% sample are greater than those of the others. The variation of magnetization with temperature (M-T curve) of the samples was measured by cooling the sample in zero fields (ZFC) and an applied field of 10 Oe (FC). The results of AC magnetic susceptibility and DC magnetization measurements were in good agreement with DC electrical resistivity measurement.

scholarly journals Visualizing the ac magnetic susceptibility of superconducting films via magneto-optical imaging

2011 ◽  
Vol 84 (21) ◽  
Author(s):  
M. Motta ◽  
F. Colauto ◽  
R. Zadorosny ◽  
T. H. Johansen ◽  
R. B. Dinner ◽  
...  
Keyword(s):  
Magnetic Susceptibility ◽  
Optical Imaging ◽  
Superconducting Films ◽  
Ac Magnetic Susceptibility

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

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