Sign reversal of the flux-flow Hall effect in sputtereda-axis- andc-axis-oriented films of 1:2:3 superconducting cuprates

1994 ◽  
Vol 49 (5) ◽  
pp. 3496-3501 ◽  
Author(s):  
J. Colino ◽  
M. A. Gonzalez ◽  
J. I. Martín ◽  
M. Velez ◽  
D. Oyola ◽  
...  
1993 ◽  
Vol 90 (1-2) ◽  
pp. 1-13 ◽  
Author(s):  
N. B. Kopnin ◽  
B. I. Ivlev ◽  
V. A. Kalatsky

1994 ◽  
Vol 235-240 ◽  
pp. 1451-1452 ◽  
Author(s):  
J.I. Martin ◽  
B. Wuyts ◽  
M. Maenhoudt ◽  
E. Osquiguil ◽  
J.L. Vicent ◽  
...  
Keyword(s):  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.


Nanoscale ◽  
2021 ◽  
Author(s):  
Ning Jiang ◽  
Bo Yang ◽  
Yulong Bai ◽  
Yaoxiang Jiang ◽  
Shifeng Zhao

Both surface and interface scattering induced a sign reversal of anomalous Hall effects (AHE) in a few heterostructures. The sign reversal exiting in a single-substance can clarify the role of...


Author(s):  
Koichi Nakao ◽  
Kunihiko Hayashi ◽  
Tadashi Utagawa ◽  
Youichi Enomoto ◽  
Naoki Koshizuka
Keyword(s):  

1996 ◽  
Vol 54 (13) ◽  
pp. 8996-8999 ◽  
Author(s):  
S. C. Gausepohl ◽  
Mark Lee ◽  
R. A. Rao ◽  
C. B. Eom
Keyword(s):  

2010 ◽  
Vol 82 (13) ◽  
Author(s):  
Hechang Lei ◽  
Rongwei Hu ◽  
E. S. Choi ◽  
C. Petrovic

1994 ◽  
Vol 73 (12) ◽  
pp. 1699-1702 ◽  
Author(s):  
S. Bhattacharya ◽  
M. J. Higgins ◽  
T. V. Ramakrishnan
Keyword(s):  

1995 ◽  
Vol 51 (21) ◽  
pp. 15291-15303 ◽  
Author(s):  
N. B. Kopnin ◽  
A. V. Lopatin

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