Elastic lattice deformation in quantum-wire heterostructures

1994 ◽  
Vol 49 (16) ◽  
pp. 11127-11133 ◽  
Author(s):  
Liberato De Caro ◽  
Leander Tapfer
Keyword(s):  
Quantum Wire ◽  
Lattice Deformation ◽  
Elastic Lattice

Light‐Driven Crawling of Molecular Crystals by Phase‐Dependent Transient Elastic Lattice Deformation

2020 ◽  
Vol 132 (26) ◽  
pp. 10423-10428
Author(s):  
Yanjun Gong ◽  
Yongxian Guo ◽  
Fayuan Ge ◽  
Wei Xiong ◽  
Jie Su ◽  
...  
Keyword(s):  
Molecular Crystals ◽  
Lattice Deformation ◽  
Elastic Lattice

Light‐Driven Crawling of Molecular Crystals by Phase‐Dependent Transient Elastic Lattice Deformation

2020 ◽  
Vol 59 (26) ◽  
pp. 10337-10342
Author(s):  
Yanjun Gong ◽  
Yongxian Guo ◽  
Fayuan Ge ◽  
Wei Xiong ◽  
Jie Su ◽  
...  
Keyword(s):  
Molecular Crystals ◽  
Lattice Deformation ◽  
Elastic Lattice

Strain measurement in In0.2Ga0.8As/GaAs quantum wires by convergent beam electron diffraction

1995 ◽  
Vol 53 ◽  
pp. 444-445
Author(s):  
S. Hillyard ◽  
Y.-P. Chen ◽  
J.D. Reed ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Semiconductor Lasers ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Convergent Beam Electron Diffraction ◽  
Zero Order ◽  
Beam Electron ◽  
Local Lattice ◽  
Device Applications ◽  
Convergent Beam

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

Coherent Control of Semiconductor Quantum Wire by High-Resolution and Stable Michelson Interferometer

2008 ◽  
Vol 128 (6) ◽  
pp. 285-291
Author(s):  
Takumi Okada ◽  
Kazuhiro Komori ◽  
Xue-Lun Wang ◽  
Mutsuo Ogura ◽  
Noriaki Tsurumachi
Keyword(s):  
High Resolution ◽  
Quantum Wire ◽  
Coherent Control ◽  
Michelson Interferometer

Kinematic analysis and deformation of a planar lattice with an arbitrary number of panels

2020 ◽  
pp. 15-19
Author(s):  
M.N. Kirsanov
Keyword(s):  
Exact Solution ◽  
Kinematic Analysis ◽  
Arbitrary Number ◽  
Design Parameters ◽  
Lattice Deformation ◽  
Planar Lattice ◽  
Force Loading

Formulae are obtained for calculating the deformations of a statically determinate lattice under the action of two types of loads in its plane, depending on the number of panels located along one side of the lattice. Two options for fixing the lattice are analyzed. Cases of kinematic variability of the structure are found. The distribution of forces in the rods of the lattice is shown. The dependences of the force loading of some rods on the design parameters are obtained. Keywords: truss, lattice, deformation, exact solution, deflection, induction, Maple system. [email protected]

scholarly journals Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Hwan-Seop Yeo ◽  
Kwanjae Lee ◽  
Young Chul Sim ◽  
Seoung-Hwan Park ◽  
Yong-Hoon Cho
Keyword(s):  
Quantum Wire ◽  
Quantum Wires ◽  
Geometrical Shape ◽  
Optical Polarization ◽  
Polarization Anisotropy ◽  
Single Quantum ◽  
Group Iii ◽  
Highly Efficient ◽  
Group Iii Nitride ◽  
Size Controlled

Abstract Optical polarization is an indispensable component in photonic applications, the orthogonality of which extends the degree of freedom of information, and strongly polarized and highly efficient small-size emitters are essential for compact polarization-based devices. We propose a group III-nitride quantum wire for a highly-efficient, strongly-polarized emitter, the polarization anisotropy of which stems solely from its one-dimensionality. We fabricated a site-selective and size-controlled single quantum wire using the geometrical shape of a three-dimensional structure under a self-limited growth mechanism. We present a strong and robust optical polarization anisotropy at room temperature emerging from a group III-nitride single quantum wire. Based on polarization-resolved spectroscopy and strain-included 6-band k·p calculations, the strong anisotropy is mainly attributed to the anisotropic strain distribution caused by the one-dimensionality, and its robustness to temperature is associated with an asymmetric quantum confinement effect.

scholarly journals Direct Imaging of Oxygen Sub-lattice Deformation in Li-rich Cathode Material Using Electron Ptychography

2021 ◽  
Vol 27 (S1) ◽  
pp. 2724-2726
Author(s):  
Weixin Song ◽  
Miguel Osorio ◽  
John Marie ◽  
Emanuela Liberti ◽  
Xiaonan Luo ◽  
...  
Keyword(s):  
Cathode Material ◽  
Lattice Deformation ◽  
Direct Imaging
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