Elastic lattice deformation of semiconductor heterostructures grown on arbitrarily oriented substrate surfaces

1993 ◽  
Vol 48 (4) ◽  
pp. 2298-2303 ◽  
Author(s):  
Liberato De Caro ◽  
Leander Tapfer
Keyword(s):  
Semiconductor Heterostructures ◽  
Lattice Deformation ◽  
Substrate Surfaces ◽  
Elastic Lattice

Light‐Driven Crawling of Molecular Crystals by Phase‐Dependent Transient Elastic Lattice Deformation

2020 ◽  
Vol 132 (26) ◽  
pp. 10423-10428
Author(s):  
Yanjun Gong ◽  
Yongxian Guo ◽  
Fayuan Ge ◽  
Wei Xiong ◽  
Jie Su ◽  
...  
Keyword(s):  
Molecular Crystals ◽  
Lattice Deformation ◽  
Elastic Lattice

Light‐Driven Crawling of Molecular Crystals by Phase‐Dependent Transient Elastic Lattice Deformation

2020 ◽  
Vol 59 (26) ◽  
pp. 10337-10342
Author(s):  
Yanjun Gong ◽  
Yongxian Guo ◽  
Fayuan Ge ◽  
Wei Xiong ◽  
Jie Su ◽  
...  
Keyword(s):  
Molecular Crystals ◽  
Lattice Deformation ◽  
Elastic Lattice

Elastic lattice deformation in quantum-wire heterostructures

1994 ◽  
Vol 49 (16) ◽  
pp. 11127-11133 ◽  
Author(s):  
Liberato De Caro ◽  
Leander Tapfer
Keyword(s):  
Quantum Wire ◽  
Lattice Deformation ◽  
Elastic Lattice

Morphologies of Nonadherent Al2O3 and Matching Substrate Surfaces

1972 ◽  
Vol 30 ◽  
pp. 524-525
Author(s):  
C. S. Giggins ◽  
J. K. Tien ◽  
B. H. Kear ◽  
F. S. Pettit
Keyword(s):  
Electron Microscopy ◽  
Oxide Scale ◽  
Oxidation Resistance ◽  
Substrate Surface ◽  
Morphological Features ◽  
Thermally Induced ◽  
Oxide Spallation ◽  
Oxidation Resistant ◽  
Induced Stresses ◽  
Substrate Surfaces

The performance of most oxidation resistant alloys and coatings is markedly improved if the oxide scale strongly adheres to the substrate surface. Consequently, in order to develop alloys and coatings with improved oxidation resistance, it has become necessary to determine the conditions that lead to spallation of oxides from the surfaces of alloys. In what follows, the morphological features of nonadherent Al2O3, and the substrate surfaces from which the Al2O3 has spalled, are presented and related to oxide spallation.The Al2O3, scales were developed by oxidizing Fe-25Cr-4Al (w/o) and Ni-rich Ni3 (Al,Ta) alloys in air at 1200°C. These scales spalled from their substrates upon cooling as a result of thermally induced stresses. The scales and the alloy substrate surfaces were then examined by scanning and replication electron microscopy.The Al2O3, scales from the Fe-Cr-Al contained filamentary protrusions at the oxide-gas interface, Fig. 1(a). In addition, nodules of oxide have been developed such that cavities were formed between the oxide and the substrate, Fig. 1(a).

Interlayer mixing in GaAs/AlxGa1-xAs heterostructures as a result of Se+ ion implantation

1988 ◽  
Vol 46 ◽  
pp. 908-909
Author(s):  
E.G. Bithell ◽  
W.M. Stobbs
Keyword(s):  
Ion Implantation ◽  
Diffusion Coefficients ◽  
Dark Field ◽  
Atomic Mass ◽  
Composition Profile ◽  
Semiconductor Heterostructures ◽  
Transmission Electron ◽  
Microscope Images ◽  
Damage Process ◽  
Electron Energy Loss

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.

Kinematic analysis and deformation of a planar lattice with an arbitrary number of panels

2020 ◽  
pp. 15-19
Author(s):  
M.N. Kirsanov
Keyword(s):  
Exact Solution ◽  
Kinematic Analysis ◽  
Arbitrary Number ◽  
Design Parameters ◽  
Lattice Deformation ◽  
Planar Lattice ◽  
Force Loading

Formulae are obtained for calculating the deformations of a statically determinate lattice under the action of two types of loads in its plane, depending on the number of panels located along one side of the lattice. Two options for fixing the lattice are analyzed. Cases of kinematic variability of the structure are found. The distribution of forces in the rods of the lattice is shown. The dependences of the force loading of some rods on the design parameters are obtained. Keywords: truss, lattice, deformation, exact solution, deflection, induction, Maple system. [email protected]

Light-Induced Drift of Quantum-Confined Electrons in Semiconductor Heterostructures

1990 ◽  
Author(s):  
Mark I. Stockman ◽  
Lakshmi N. Pandey ◽  
Thomas F. George
Keyword(s):  
Semiconductor Heterostructures ◽  
Quantum Confined
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