Swift heavy ions in magnetic insulators: A damage-cross-section velocity effect

1993 ◽  
Vol 48 (2) ◽  
pp. 920-925 ◽  
Author(s):  
A. Meftah ◽  
F. Brisard ◽  
J. M. Costantini ◽  
M. Hage-Ali ◽  
J. P. Stoquert ◽  
...  
Keyword(s):  
Cross Section ◽  
Heavy Ions ◽  
Swift Heavy Ions ◽  
Magnetic Insulators ◽  
Velocity Effect

Mechanisms of Energy Transfer in Solids Irradiated with Swift Heavy Ions

1997 ◽  
Vol 504 ◽  
Author(s):  
G. Szenes
Keyword(s):  
Energy Transfer ◽  
Cross Section ◽  
Heavy Ions ◽  
Energy Deposition ◽  
Thermal Spike ◽  
Swift Heavy Ions ◽  
Thermal Spike Model ◽  
Spike Model ◽  
Track Formation ◽  
Velocity Effect

ABSTRACTThe damage cross section velocity effect is studied in LiNbO3, Y3Fe5O12 and SiO2 α-quartz. The application of our thermal spike model reveals that the efficiency of track formation varies by a factor of two in the range of 2–4 MeV/nucleon. The effect is explained by the varying fraction of energy deposition to the lattice involving lattice ions.

Diffusion-transport cross section and stopping power of swift heavy ions

2001 ◽  
Vol 63 (5) ◽  
Author(s):  
Gilles Maynard ◽  
Günter Zwicknagel ◽  
Claude Deutsch ◽  
Konstantinos Katsonis
Keyword(s):  
Cross Section ◽  
Heavy Ions ◽  
Stopping Power ◽  
Diffusion Transport ◽  
Swift Heavy Ions ◽  
Transport Cross Section

scholarly journals Unravelling the secrets of the resistance of GaN to strongly ionising radiation

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Miguel C. Sequeira ◽  
Jean-Gabriel Mattei ◽  
Henrique Vazquez ◽  
Flyura Djurabekova ◽  
Kai Nordlund ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Ionising Radiation ◽  
Atomistic Simulations ◽  
Extended Defects ◽  
Swift Heavy Ions ◽  
High Fluences ◽  
Radiation Resistant ◽  
Simulation And Experiment ◽  
Underlying Mechanisms ◽  
Radiation Hard

AbstractGaN is the most promising upgrade to the traditional Si-based radiation-hard technologies. However, the underlying mechanisms driving its resistance are unclear, especially for strongly ionising radiation. Here, we use swift heavy ions to show that a strong recrystallisation effect induced by the ions is the key mechanism behind the observed resistance. We use atomistic simulations to examine and predict the damage evolution. These show that the recrystallisation lowers the expected damage levels significantly and has strong implications when studying high fluences for which numerous overlaps occur. Moreover, the simulations reveal structures such as point and extended defects, density gradients and voids with excellent agreement between simulation and experiment. We expect that the developed modelling scheme will contribute to improving the design and test of future radiation-resistant GaN-based devices.

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