Multiple-order Raman scattering in crystalline and amorphous silicon

1993 ◽  
Vol 48 (9) ◽  
pp. 6024-6032 ◽  
Author(s):  
A. Zwick ◽  
R. Carles
Keyword(s):  
Raman Scattering ◽  
Amorphous Silicon

RAMAN SCATTERING IN ANNEAL STABLE AMORPHOUS SILICON

1981 ◽  
Vol 42 (C6) ◽  
pp. C6-54-C6-56 ◽  
Author(s):  
S. T. Kshirsagar ◽  
J. S. Lannin
Keyword(s):  
Raman Scattering ◽  
Amorphous Silicon

Observation of spontaneous Raman scattering in hydrogenated amorphous silicon wire waveguide at 1.55 µm

2013 ◽  
Vol 49 (9) ◽  
pp. 610-612
Author(s):  
K. Tanizawa ◽  
S. Suda ◽  
Y. Sakakibara ◽  
T. Kamei ◽  
R. Takei ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Spontaneous Raman Scattering ◽  
Hydrogenated Amorphous

Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel

2009 ◽  
Vol 255 (19) ◽  
pp. 8252-8256 ◽  
Author(s):  
Thanh Nga Nguyen ◽  
Van Duy Nguyen ◽  
Sungwook Jung ◽  
Junsin Yi
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Raman Scattering ◽  
Amorphous Silicon ◽  
Silicon Thin Films

Double-resonance-enhanced Raman scattering in laser-recrystallized amorphous silicon film

1989 ◽  
Vol 40 (15) ◽  
pp. 10420-10424 ◽  
Author(s):  
M. C. Lee ◽  
C. R. Huang ◽  
Y. S. Chang ◽  
Y. F. Chao
Keyword(s):  
Raman Scattering ◽  
Amorphous Silicon ◽  
Silicon Film ◽  
Double Resonance ◽  
Amorphous Silicon Film ◽  
Enhanced Raman Scattering

scholarly journals Raman Amplifier Based on Amorphous Silicon Nanoparticles

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
M. A. Ferrara ◽  
I. Rendina ◽  
S. N. Basu ◽  
L. Dal Negro ◽  
L. Sirleto
Keyword(s):  
Raman Scattering ◽  
Amorphous Silicon ◽  
Silicon Nanoparticles ◽  
Stimulated Raman Scattering ◽  
Pump Laser ◽  
Great Promise ◽  
Threshold Power ◽  
Raman Lasers ◽  
Superlattice Structures ◽  
Amorphous Silicon Nanoparticles

The observation of stimulated Raman scattering in amorphous silicon nanoparticles embedded in Si-rich nitride/silicon superlattice structures (SRN/Si-SLs) is reported. Using a 1427 nm continuous-wavelength pump laser, an amplification of Stokes signal up to 0.9 dB/cm at 1540.6 nm and a significant reduction in threshold power of about 40% with respect to silicon are experimentally demonstrated. Our results indicate that amorphous silicon nanoparticles are a great promise for Si-based Raman lasers.

Kinetics Of Hydrogen Evolution And Crystallization In Hydrogenated Amorphous Silicon Films Studied By Thermal Analysis And Raman Scattering

1993 ◽  
Vol 321 ◽  
Author(s):  
Nagarajan Sridhar ◽  
D. D. L. Chung ◽  
W. A. Anderson ◽  
W. Y. Yu ◽  
L. P. Fu ◽  
...  
Keyword(s):  
Hydrogen Bonding ◽  
Raman Scattering ◽  
Amorphous Silicon ◽  
Hydrogen Evolution ◽  
Deposition Temperature ◽  
Evolved Gas Analysis ◽  
Silicon Film ◽  
Hydrogenated Amorphous Silicon ◽  
Film Deposition ◽  
Hydrogenated Amorphous

ABSTRACTWe observed the processes of hydrogen evolution and crystallization in hydrogenated Amorphous silicon 0.5–7 μm thick films (deposited by dc glow discharge on Molybdenum) by differential scanning calorimetry (DSC), Raman scattering and thermogravimetric analysis (TGA). Investigation was made as a function of doping, deposition temperature and film thickness. For all the films, an endothermic DSC peak was observed at 694 °C (onset). That this peak was at least partly due to hydrogen evolution was shown by TGA, which showed weight loss beginning at 694 °C, and by evolved gas analysis, which showed hydrogen evolution at 694 °C. This temperature (658–704 °C) increased with increasing heating rate (5–30 °C/min). Doping reduced this temperature from 694 to 625 °C for boron doping and to 675 °C for phosphorous doping. Hydrogen evolution kinetics and FTIR results suggest that the silicon-hydrogen bonding in the intrinsic film was a mixture of SiH and S1H2, and was predominantly SiH in the phosphorous doped films and SiH2 in the boron doped films. Crystallization was independent of silicon-hydrogen bonding in the as-deposited Amorphous silicon film. It was bulk (not interface) induced. No exothermic DSC peak accompanied the crystallization. The film deposition temperature had little effect on the DSC result, but crystallization was enhanced by a higher deposition temperature.

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