Raman-scattering measurements and fracton interpretation of vibrational properties of amorphous silicon

1992 ◽  
Vol 46 (22) ◽  
pp. 14893-14896 ◽  
Author(s):  
Mile Ivanda
Keyword(s):  
Raman Scattering ◽  
Amorphous Silicon ◽  
Vibrational Properties ◽  
Scattering Measurements

RAMAN SCATTERING IN ANNEAL STABLE AMORPHOUS SILICON

1981 ◽  
Vol 42 (C6) ◽  
pp. C6-54-C6-56 ◽  
Author(s):  
S. T. Kshirsagar ◽  
J. S. Lannin
Keyword(s):  
Raman Scattering ◽  
Amorphous Silicon

Raman scattering measurements of vibrational and rotational distributions in expanding nitrogen

1993 ◽  
Author(s):  
WALTER GILLESPIE ◽  
DANIEL BERSHADER ◽  
SURENDRA SHARMA ◽  
STEPHEN RUFFIN
Keyword(s):  
Raman Scattering ◽  
Scattering Measurements

Observation of spontaneous Raman scattering in hydrogenated amorphous silicon wire waveguide at 1.55 µm

2013 ◽  
Vol 49 (9) ◽  
pp. 610-612
Author(s):  
K. Tanizawa ◽  
S. Suda ◽  
Y. Sakakibara ◽  
T. Kamei ◽  
R. Takei ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Spontaneous Raman Scattering ◽  
Hydrogenated Amorphous

X-Ray and Raman Studies of Interlayer Mixing in SimGem Superlattices

1991 ◽  
Vol 220 ◽  
Author(s):  
R. C. Bowman ◽  
P. M. Adams ◽  
S. J. Chang ◽  
V. Arbet-Engels ◽  
K. L. Wang
Keyword(s):  
Activation Energy ◽  
Raman Scattering ◽  
Vacancy Mechanism ◽  
Strained Si ◽  
X Ray ◽  
Scattering Measurements ◽  
Intensity Changes ◽  
Interface Mixing ◽  
Interdiffusion Coefficients

ABSTRACTInterface mixing between the Ge and Si layers in symmetrically strained SimGem superlattices occurs during post growth thermal anneals. Interdiffusion coefficients were obtained from intensity changes in the low angle superlattice x-ray satellites on samples with nominal periodicities between 1.4nm and 5.6nm. A common activation energy of 3.0±0.1 eV was found. The bulk interdiffusion coefficients for SimGem were derived since measurements were made on samples with different layer thicknesses. Intermixing appears to occur by diffusion of Si atoms into the Ge layers via a vacancy mechanism. Raman scattering measurements support this process as well as the formation of Si1−xGex, alloy layers during the anneals.

Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel

2009 ◽  
Vol 255 (19) ◽  
pp. 8252-8256 ◽  
Author(s):  
Thanh Nga Nguyen ◽  
Van Duy Nguyen ◽  
Sungwook Jung ◽  
Junsin Yi
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Raman Scattering ◽  
Amorphous Silicon ◽  
Silicon Thin Films

Vibrational properties of amorphous silicon alloys

1981 ◽  
Vol 23 (10) ◽  
pp. 5263-5268 ◽  
Author(s):  
W. B. Pollard ◽  
J. D. Joannopoulos
Keyword(s):  
Amorphous Silicon ◽  
Vibrational Properties ◽  
Silicon Alloys
Sign in / Sign up

Export Citation Format

Share Document