Characterizing hot-carrier transport in silicon heterostructures with the use of ballistic-electron-emission microscopy

1993 ◽  
Vol 48 (8) ◽  
pp. 5712-5715 ◽  
Author(s):  
L. D. Bell ◽  
S. J. Manion ◽  
M. H. Hecht ◽  
W. J. Kaiser ◽  
R. W. Fathauer ◽  
...  
1992 ◽  
Vol 46 (19) ◽  
pp. 12826-12829 ◽  
Author(s):  
A. M. Milliken ◽  
S. J. Manion ◽  
W. J. Kaiser ◽  
L. D. Bell ◽  
M. H. Hecht

1993 ◽  
Vol 48 (12) ◽  
pp. 8833-8839 ◽  
Author(s):  
Philipp Niedermann ◽  
Lidia Quattropani ◽  
Katalin Solt ◽  
Ivan Maggio-Aprile ◽  
O/ystein Fischer

2000 ◽  
Vol 10 (01) ◽  
pp. 55-74
Author(s):  
VENKATESH NARAYANAMURTI ◽  
MICHAEL KOZHEVNIKOV

The measurement of the physical properties of individual semiconductor quantum objects at a length scale corresponding to the de Broglie wavelength of electrons in most semiconductors (a few mm) is a difficult challenge. Determination of spectroscopic properties of individual quantum objects buried below the surface is particularly daunting. In this paper we will review briefly recent progress in the use of BEEM (ballistic electron emission microscopy) for the study of semiconductor alloys and novel quantum objects. We will also discuss general aspects of BEEM experiment and theory in true ballistic and quasi-ballistic hot carrier transport. Examples of the use of this technique for studying buried heterojunctions will be presented. Potential modifications of the technique for imaging the optical emission under conditions of ballistic electron injection will also be discussed.


2001 ◽  
Vol 66 (1-2) ◽  
pp. 3-51 ◽  
Author(s):  
P.L. de Andres ◽  
F.J. Garcia-Vidal ◽  
K. Reuter ◽  
F. Flores

1996 ◽  
Vol 69 (7) ◽  
pp. 940-942 ◽  
Author(s):  
E. Y. Lee ◽  
S. Bhargava ◽  
M. A. Chin ◽  
V. Narayanamurti ◽  
K. J. Pond ◽  
...  

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