Interband optical transitions of a parabolic quantum well in the presence of an applied midinfrared field

1993 ◽  
Vol 48 (4) ◽  
pp. 2292-2297
Author(s):  
Shao-hua Pan
Keyword(s):  
Quantum Well ◽  
Optical Transitions

Excitation of optical transitions in the InxGa1−xAs‐GaAs quantum well system by the free exciton in the barrier

1993 ◽  
Vol 74 (2) ◽  
pp. 1453-1455 ◽  
Author(s):  
D. C. Reynolds ◽  
B. Jogai ◽  
P. W. Yu ◽  
C. E. Stutz
Keyword(s):  
Quantum Well ◽  
Free Exciton ◽  
Optical Transitions

Temperature dependence of optical transitions in AlxGa1–xAs/GaAs quantum well structures grown by molecular beam epitaxy

2005 ◽  
Vol 490 (2) ◽  
pp. 161-164 ◽  
Author(s):  
A. Caballero-Rosas ◽  
C. Mejía-García ◽  
G. Contreras-Puente ◽  
M. López-López
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Optical Transitions ◽  
Quantum Well Structures

The effect of hydrostatic pressure on subband structure and optical transitions in modulation-doped quantum well

2011 ◽  
Vol 49 (6) ◽  
pp. 635-643 ◽  
Author(s):  
F. Ungan ◽  
U. Yesilgul ◽  
S. Sakiroglu ◽  
E. Kasapoglu ◽  
H. Sari ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Well ◽  
Optical Transitions ◽  
Effect Of Hydrostatic Pressure ◽  
Subband Structure

Comparison of optical transitions in InGaN quantum well structures and microdisks

2001 ◽  
Vol 89 (9) ◽  
pp. 4951-4954 ◽  
Author(s):  
Lun Dai ◽  
Bei Zhang ◽  
J. Y. Lin ◽  
H. X. Jiang
Keyword(s):  
Quantum Well ◽  
Optical Transitions ◽  
Quantum Well Structures

scholarly journals Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 237
Author(s):  
Mateusz Hajdel ◽  
Mikolaj Chlipała ◽  
Marcin Siekacz ◽  
Henryk Turski ◽  
Paweł Wolny ◽  
...  
Keyword(s):  
Quantum Well ◽  
Emission Spectra ◽  
Spatial Separation ◽  
Blue Shift ◽  
Electroluminescence Spectrum ◽  
Complex Spectrum ◽  
Optical Transitions ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Current Densities

The design of the active region is one of the most crucial problems to address in light emitting devices (LEDs) based on III-nitride, due to the spatial separation of carriers by the built-in polarization. Here, we studied radiative transitions in InGaN-based LEDs with various quantum well (QW) thicknesses—2.6, 6.5, 7.8, 12, and 15 nm. In the case of the thinnest QW, we observed a typical effect of screening of the built-in field manifested with a blue shift of the electroluminescence spectrum at high current densities, whereas the LEDs with 6.5 and 7.8 nm QWs exhibited extremely high blue shift at low current densities accompanied by complex spectrum with multiple optical transitions. On the other hand, LEDs with the thickest QWs showed a stable, single-peak emission throughout the whole current density range. In order to obtain insight into the physical mechanisms behind this complex behavior, we performed self-consistent Schrodinger–Poisson simulations. We show that variation in the emission spectra between the samples is related to changes in the carrier density and differences in the magnitude of screening of the built-in field inside QWs. Moreover, we show that the excited states play a major role in carrier recombination for all QWs, apart from the thinnest one.

Wave Function Engineering of Linear and Non-Linear Optical Response in Si-Ge Quantum Well Structures and Superlattices

1991 ◽  
Vol 220 ◽  
Author(s):  
M. Jaros ◽  
R. J. Turton ◽  
K. B. Wong
Keyword(s):  
Wave Function ◽  
Electronic Structure ◽  
Quantum Well ◽  
Finite Length ◽  
Optical Response ◽  
Optical Nonlinearities ◽  
Optical Transitions ◽  
Quantum Well Structures ◽  
Non Linear ◽  
Zone Folding

ABSTRACTWe show that the infinite Si-Ge superlattices predicted to exhibit strong optical transitions across the fundamental gap and between conduction subbands also give rise to significant optical nonlinearities. Efficient optical transitions can also be achieved in finite-length structures grown on Si or Ge substrates. However, the zone folding argument does not apply and the electronic structure strongly reflects the finite length of such systems.

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