Transport in polyaniline near the critical regime of the metal-insulator transition

1993 ◽  
Vol 48 (24) ◽  
pp. 17685-17694 ◽  
Author(s):  
Reghu Menon ◽  
C. O. Yoon ◽  
D. Moses ◽  
A. J. Heeger ◽  
Y. Cao
Keyword(s):  
Insulator Transition ◽  
Critical Regime ◽  
Metal Insulator Transition ◽  
Metal Insulator

METAL–INSULATOR TRANSITION AND THE TEMPERATURE OF THE PSEUDOGAP ANOMALY OPENING IN PRASEODYMIUM DOPED Y1-zPrzBa2Cu3O7-δ SINGLE CRYSTALS

2013 ◽  
Vol 27 (04) ◽  
pp. 1350029 ◽  
Author(s):  
R. V. VOVK ◽  
Z. F. NAZYROV ◽  
I. L. GOULATIS ◽  
A. CHRONEOS ◽  
V. M. PINTO SIMOES
Keyword(s):  
Electrical Resistivity ◽  
Single Crystals ◽  
Insulator Transition ◽  
Critical Regime ◽  
Significant Shift ◽  
Asymptotic Dependence ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
The One ◽  
Praseodymium Doping

The influence of praseodymium doping on the electrical resistivity in the ab-plane of Y 1-z Pr z Ba 2 Cu 3 O 7-δ single crystals, is investigated. It is determined that as the concentration of praseodymium (0.0 ≤ z ≤ 0.5) is rising there occurs a significant shift of the temperature regions, corresponding to the metal–insulator transitions, as well as to the regime of the implementation of the pseudogap anomaly. The part of the curves related to the metal–insulator transition are well described by means of an asymptotic dependence that corresponds to the implementation of a quantum critical regime in the system, the so-called law of the "one third".

Hopping conduction in p-type MoS2 near the critical regime of the metal-insulator transition

2015 ◽  
Vol 107 (22) ◽  
pp. 223107 ◽  
Author(s):  
Tae-Eon Park ◽  
Joonki Suh ◽  
Dongjea Seo ◽  
Joonsuk Park ◽  
Der-Yuh Lin ◽  
...  
Keyword(s):  
Insulator Transition ◽  
Critical Regime ◽  
Hopping Conduction ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
P Type

Spin Polarized Tunneling at the Metal-Insulator Transition

2003 ◽  
Vol 17 (18n20) ◽  
pp. 3723-3725 ◽  
Author(s):  
W. Teizer ◽  
F. Hellman ◽  
R. C. Dynes
Keyword(s):  
Spin Polarization ◽  
Density Of States ◽  
Insulator Transition ◽  
Critical Regime ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Spin Polarized ◽  
Quantum Critical ◽  
Spin Polarized Tunneling

We have determined the spin polarized density of states (DOS) of 3-d amorphous Gd x Si 1-x in the quantum critical regime of a tunable Metal-Insulator Transition (MIT). Using a spin polarized BCS DOS we fit the data and extract the spin polarization P.

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