Nature of the native-defect ESR and hydrogen-dangling-bond centers in thin diamond films

1993 ◽  
Vol 48 (23) ◽  
pp. 17595-17598 ◽  
Author(s):  
H. Jia ◽  
J. Shinar ◽  
D. P. Lang ◽  
M. Pruski
Keyword(s):  
Diamond Films ◽  
Native Defect ◽  
Dangling Bond

On the Nature of the Native Defect ESR in Thin Diamond Films

1994 ◽  
Vol 339 ◽  
Author(s):  
J. Shinar ◽  
H. Jia ◽  
D. P. Lang ◽  
M. Pruski
Keyword(s):  
Relaxation Rate ◽  
Diamond Films ◽  
Stacking Faults ◽  
Lattice Relaxation ◽  
Spin Lattice Relaxation ◽  
Native Defect ◽  
Paramagnetic Centers ◽  
Dangling Bond ◽  
Spin Lattice ◽  
X Band

ABSTRACTThe X-band ESR of thin diamond films deposited from 99.5% H2/0.5% CH4 is compared to that of films similarly prepared from D2CD4 and H2/13CH4. The main line and the satellites at ±7.2 G are unaffected by annealing at T <. 1100°C, but their intensity is reduced upon annealing at T ∼ 1200°C. As the satellites are absent from the deuterated films, they are attributed to newly identified dangling bond-H centers, either on internal microvoid surfaces or embedded in the tetrahedral network. This is consistent with the 13C spin-lattice relaxation rate, which indicates that the distribution of paramagnetic centers is homogeneous to within ∼0.04 μm. However, they may be nonuniformly distributed on a finer scale, consistent with the concentrations in m ulti vacancies or stacking faults recently suggested by Fanciulli and Moustakas.

Evidence for Different Kinds of Dangling Bond Defects in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
Minh Tran ◽  
H. Fritzsche ◽  
P. Stradins
Keyword(s):  
Defect Concentration ◽  
Electron Lifetime ◽  
Native Defect ◽  
Dangling Bond ◽  
Native Defects

Comparing the photoconductivity σp of undoped samples with different native defect concentrations we find that light-induced metastable defects decrease the electron lifetime more strongly than the native defects. We discuss the differences between native and metastable dangling bond defects. We find that the constant photocurrent method underestimates the defect concentration in undoped a-Si:H.

Correlation Between Defects and Electrical Conduction in Surface Conductive Layer of CVD-diamond Films

1996 ◽  
Vol 442 ◽  
Author(s):  
Y. Show ◽  
F. Matsuoka ◽  
S. Ri ◽  
Y. Akiba ◽  
T. Kurosu ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Carbon Atom ◽  
Electron Spin ◽  
Electrical Conduction ◽  
Nearest Neighbor ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Conductive Layer ◽  
Dangling Bond ◽  
Spin Resonance

Correlation between defects and electrical conduction in surface conductive layers of CVD diamond films has been studied using electron spin resonance ( ESR ) and two points probe technique methods. The ESR analysis revealed the presence of Pac-center with spin density of 1020 spins/cm3. The Pac-center is composed from two ESR signals: ESR signal from carbon dangling bond with carbon atom neighbors and ESR signal from carbon dangling bond associated with nearest neighbor hole ( hole associated Pac-center ). The hole associated Pac-center is an electrically active defect.

A Novel TEM Technique for Characterizing As-Grown CVD Diamond Films

1991 ◽  
Vol 49 ◽  
pp. 956-957 ◽  
Author(s):  
Z.L. Wang ◽  
J. Bentley ◽  
R.E. Clausing ◽  
L. Heatherly ◽  
L.L. Horton
Keyword(s):  
Diamond Films ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Dark Field ◽  
Growth Surface ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
First Time ◽  
Microstructural Studies

Microstructural studies by transmission electron microscopy (TEM) of diamond films grown by chemical vapor deposition (CVD) usually involve tedious specimen preparation. This process has been avoided with a technique that is described in this paper. For the first time, thick as-grown diamond films have been examined directly in a conventional TEM without thinning. With this technique, the important microstructures near the growth surface have been characterized. An as-grown diamond film was fractured on a plane containing the growth direction. It took about 5 min to prepare a sample. For TEM examination, the film was tilted about 30-45° (see Fig. 1). Microstructures of the diamond grains on the top edge of the growth face can be characterized directly by transmitted electron bright-field (BF) and dark-field (DF) images and diffraction patterns.

Characterization of homoepitaxial diamond films by Electron microscopy

1991 ◽  
Vol 49 ◽  
pp. 880-881
Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Large Degree ◽  
Rf Plasma ◽  
Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

Fracture Studies of Diamond Films on Silicon

1991 ◽  
Author(s):  
Jr Mecholsky ◽  
Tsai J. J. ◽  
Drawl Y. L. ◽  
W. R.
Keyword(s):  
Diamond Films

Temperature Dependent Line-Shape of the Silicon Dangling Bond EPR-Resonance in Polycrystalline Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
N. H. Nickel ◽  
E. A. Schiff
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Polycrystalline Silicon ◽  
Room Temperature ◽  
Dangling Bond ◽  
Temperature Dependent ◽  
Paramagnetic Resonance ◽  
Temperature Electron ◽  
Motional Narrowing ◽  
G Value ◽  
Electron Paramagnetic

AbstractThe temperature dependence of the silicon dangling-bond resonance in polycrystalline (poly-Si) and amorphous silicon (a-Si:H) was measured. At room temperature, electron paramagnetic resonance (EPR) measurements reveal an isotropie g-value of 2.0055 and a line width of 6.5 and 6.1 G for Si dangling-bonds in a-Si:H and poly-Si, respectively. In both materials spin density and g-value are independent of temperature. While in a-Si:H the width of the resonance did not change with temperature, poly-Si exhibits a remarkable T dependence of ΔHpp. In unpassivated poly-Si a pronounced decrease of ΔHpp is observed for temperatures above 300 K. At 384 K ΔHpp reaches a minimum of 5.1 G, then increases to 6.1 G at 460 K, and eventually decreases to 4.6 G at 530 K. In hydrogenated poly-Si ΔHpp decreases monotonically above 425 K. The decrease of ΔHpp is attributed to electron hopping causing motional narrowing. An average hopping distance of 15 and 17.5 Å was estimated for unhydrogenated and H passivated poly-Si, respectively.

scholarly journals Thermal conductivity of nano- and micro-crystalline diamond films studied by photothermal excitation of cantilever structures

2021 ◽  
Vol 113 ◽  
pp. 108279
Author(s):  
Leo Saturday ◽  
Leslie Wilson ◽  
Scott Retterer ◽  
Nicholas J. Evans ◽  
Dayrl Briggs ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Diamond Films
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