Electron-drift-mobility measurements and exponential conduction-band tails in hydrogenated amorphous silicon-germanium alloys

1993 ◽  
Vol 47 (15) ◽  
pp. 9435-9448 ◽  
Author(s):  
Qi Wang ◽  
Homer Antoniadis ◽  
E. A. Schiff ◽  
S. Guha
Keyword(s):  
Amorphous Silicon ◽  
Conduction Band ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Drift Mobility ◽  
Electron Drift ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous ◽  
Electron Drift Mobility ◽  
Band Tails

Picosecond electron drift mobility measurements in hydrogenated amorphous silicon

1989 ◽  
Vol 54 (19) ◽  
pp. 1911-1913 ◽  
Author(s):  
E. A. Schiff ◽  
R. I. Devlen ◽  
H. T. Grahn ◽  
J. Tauc ◽  
S. Guha
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Drift Mobility ◽  
Electron Drift ◽  
Hydrogenated Amorphous ◽  
Electron Drift Mobility

Properties of Catalytic-Cvd Amorphous Silicon-Germanium (a-SiGe:H)

1990 ◽  
Vol 192 ◽  
Author(s):  
Hideki Matsumura ◽  
Masaaki Yamaguchi ◽  
Kazuo Morigaki
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Characteristic Energy ◽  
Optical Band Gaps ◽  
Spin Resonance ◽  
Amorphous Silicon Germanium ◽  
Conductive Properties ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon-germanium (a-SiGe:H) films are prepared by the catalytic chemical vapor deposition (Cat-CVD) method using a SiH4, GeH4 and H4 gas mixture. Properties of the films are investigated by the photo-thermal deflection spectroscopy (PDS) and electron spin resonance (ESR) measurements, in addition to the photo-conductive and structural studies. It is found that the characteristic energy of Urbach tail, ESR spin density and other photo-conductive properties of Cat-CVD a-SiGe:H films with optical band gaps around 1.45 eV are almost equivalent to those of the device quality glow discharge hydrogenated amorphous silicon (a-Si:H).

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