Time resolved photoluminescence study of Si modulation doped GaN/Al0.07Ga0.93N multiple quantum wells

2004 ◽  
Vol 241 (5) ◽  
pp. 1124-1133 ◽  
Author(s):  
H. Haratizadeh ◽  
B. Monemar ◽  
P. P. Paskov ◽  
P. O. Holtz ◽  
G. Pozina ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Time Resolved Photoluminescence

Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum Wells

1996 ◽  
Vol 449 ◽  
Author(s):  
M. Smith ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
A. Khan ◽  
Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum Wells ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Optical Transitions ◽  
Time Resolved ◽  
Metal Organic ◽  
Recombination Lifetimes ◽  
Time Resolved Photoluminescence

ABSTRACTTime-resolved photoluminescence (PL) has been employed to study the optical transitions and their dynamical processes in GaN and InxGa1-xN epilayers, and GaN/GaN and GaN/ALxGa1-xN multiple quantum wells (MQW). We compare the results from both metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) grown samples. In addition, results are also compared with GaAs/ALxGa1-xAs MQW. It was found for all samples that the low temperature emission lines were dominated by radiative recombination transitions of either localized or free excitons, which demonstrates the high quality and purity of these III-nitride materials.

scholarly journals Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells

2002 ◽  
Vol 80 (21) ◽  
pp. 3943-3945 ◽  
Author(s):  
Mee-Yi Ryu ◽  
C. Q. Chen ◽  
E. Kuokstis ◽  
J. W. Yang ◽  
G. Simin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence

1998 ◽  
Vol 537 ◽  
Author(s):  
H. S. Kim ◽  
Y. Lin ◽  
H. X. Jiang ◽  
W. W. Chow ◽  
A. Botchkarev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Peak Position ◽  
Multiple Quantum Wells ◽  
Collective Effects ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Delay Times ◽  
Piezoelectric Effects ◽  
Piezoelectric Field ◽  
Time Resolved Photoluminescence

AbstractPiezoelectric effects in GaN/AlGaN multiple quantum wells (MQWs) have been directly probed by picosecond time-resolved photoluminescence (PL) spectroscopy. The time-resolved PL spectra of the 40 Å well MQWs reveal that the PL transition peak position is in fact blueshifted at early delay times due to the collective effects of quantum confinement of carriers, piezoelectric field, and Coulomb screening. However, the spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. By comparing experimental and calculation results, we have obtained a low limit of the piezoelectric field strength to be about 560 kV/cm in the 40 Å well GaN/Al0.15Ga0.85N MQWs.

scholarly journals Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence

1999 ◽  
Vol 4 (S1) ◽  
pp. 130-135
Author(s):  
H. S. Kim ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
W. W. Chow ◽  
A. Botchkarev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Peak Position ◽  
Multiple Quantum Wells ◽  
Collective Effects ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Delay Times ◽  
Piezoelectric Effects ◽  
Piezoelectric Field ◽  
Time Resolved Photoluminescence

Piezoelectric effects in GaN/AlGaN multiple quantum wells (MQWs) have been directly probed by picosecond time-resolved photoluminescence (PL) spectroscopy. The time-resolved PL spectra of the 40 Å well MQWs reveal that the PL transition peak position is in fact blueshifted at early delay times due to the collective effects of quantum confinement of carriers, piezoelectric field, and Coulomb screening. However, the spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. By comparing experimental and calculation results, we have obtained a low limit of the piezoelectric field strength to be about 560 kV/cm in the 40 Å well GaN/Al0.15Ga0.85N MQWs.

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