Giant oscillations in the Hall conductivity of weakly coupled quantum wires

1993 ◽  
Vol 47 (3) ◽  
pp. 1675-1678 ◽  
Author(s):  
Ulrich Wulf ◽  
Jan Kučera ◽  
A. H. MacDonald
1997 ◽  
Vol 11 (22) ◽  
pp. 2683-2706
Author(s):  
I. Bartoš ◽  
B. Rosenstein

Simple expressions for local and total Hall conductivities in finite two dimensional electron systems under magnetic field are obtained from the Kubo formula. The deviations of the Hall conductivity from integer values are always negative and their magnitude is inversely proportional to the effective width of the sample and proportional to the slope of the Landau branch dispersion relation at the Fermi level, Eq. (22). We also calculate the local conductivity in finite samples. The conductivity density is constant in the bulk and sums up to an integer value. Its spatial distribution is terminated in the bulk in a universal manner. Illustrations for simple models of the confinement barrier, as well as relation to recent experimental data for quantum wires are given.


2017 ◽  
Vol 7 (1) ◽  
Author(s):  
J. Dufouleur ◽  
L. Veyrat ◽  
B. Dassonneville ◽  
E. Xypakis ◽  
J. H. Bardarson ◽  
...  

1998 ◽  
Vol 58 (20) ◽  
pp. 13944-13950 ◽  
Author(s):  
C. Steinebach ◽  
D. Heitmann ◽  
Vidar Gudmundsson

1996 ◽  
Vol 54 (8) ◽  
pp. R5247-R5250 ◽  
Author(s):  
A. Messica ◽  
U. Meirav ◽  
Hadas Shtrikman ◽  
V. Umansky ◽  
D. Mahalu
Keyword(s):  

2014 ◽  
Vol 89 (10) ◽  
Author(s):  
Inbar Seroussi ◽  
Erez Berg ◽  
Yuval Oreg

Author(s):  
S. Hillyard ◽  
Y.-P. Chen ◽  
J.D. Reed ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.


Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.


1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 339-342 ◽  
Author(s):  
L Parthier
Keyword(s):  

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