scholarly journals Weakly-coupled quasi-1D helical modes in disordered 3D topological insulator quantum wires

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
J. Dufouleur ◽  
L. Veyrat ◽  
B. Dassonneville ◽  
E. Xypakis ◽  
J. H. Bardarson ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Quantum Wires ◽  
Weakly Coupled

Giant oscillations in the Hall conductivity of weakly coupled quantum wires

1993 ◽  
Vol 47 (3) ◽  
pp. 1675-1678 ◽  
Author(s):  
Ulrich Wulf ◽  
Jan Kučera ◽  
A. H. MacDonald
Keyword(s):  
Quantum Wires ◽  
Hall Conductivity ◽  
Weakly Coupled

Far-infrared absorption of interaction-induced ground states of two weakly coupled quantum wires

1998 ◽  
Vol 58 (20) ◽  
pp. 13944-13950 ◽  
Author(s):  
C. Steinebach ◽  
D. Heitmann ◽  
Vidar Gudmundsson
Keyword(s):  
Infrared Absorption ◽  
Quantum Wires ◽  
Ground States ◽  
Far Infrared ◽  
Weakly Coupled

scholarly journals Bi2Se3 topological insulator quantum wires

2018 ◽  
Vol 2 (9) ◽  
pp. 095007
Author(s):  
A Nikolic ◽  
C H W Barnes
Keyword(s):  
Topological Insulator ◽  
Quantum Wires

Bistability and dynamic depopulation in transport through a system of weakly coupled quantum wires

1996 ◽  
Vol 54 (8) ◽  
pp. R5247-R5250 ◽  
Author(s):  
A. Messica ◽  
U. Meirav ◽  
Hadas Shtrikman ◽  
V. Umansky ◽  
D. Mahalu
Keyword(s):  
Quantum Wires ◽  
Weakly Coupled

scholarly journals Topological superconducting phases of weakly coupled quantum wires

2014 ◽  
Vol 89 (10) ◽  
Author(s):  
Inbar Seroussi ◽  
Erez Berg ◽  
Yuval Oreg
Keyword(s):  
Quantum Wires ◽  
Superconducting Phases ◽  
Weakly Coupled

Strain measurement in In0.2Ga0.8As/GaAs quantum wires by convergent beam electron diffraction

1995 ◽  
Vol 53 ◽  
pp. 444-445
Author(s):  
S. Hillyard ◽  
Y.-P. Chen ◽  
J.D. Reed ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Semiconductor Lasers ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Convergent Beam Electron Diffraction ◽  
Zero Order ◽  
Beam Electron ◽  
Local Lattice ◽  
Device Applications ◽  
Convergent Beam

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

High-field magnetoluminescence of ZnSe quantum wires

1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 339-342 ◽  
Author(s):  
L Parthier
Keyword(s):  
High Field ◽  
Quantum Wires
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