Optical study of extended-molecular-layer flat islands in lattice-matchedIn0.53Ga0.47As/InP andIn0.53Ga0.47As/In1−xGaxAsyP1−yquantum wells grown by low-pressure metal-organic vapor-phase epitaxy with different interruption cycles

1992 ◽  
Vol 46 (15) ◽  
pp. 9525-9537 ◽  
Author(s):  
R. Sauer ◽  
S. Nilsson ◽  
P. Roentgen ◽  
W. Heuberger ◽  
V. Graf ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Molecular Layer ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Optical Study ◽  
Organic Vapor ◽  
Metal Organic

Low-Pressure Metal-Organic-Vapor-Phase-Epitaxy (MOVPE) of ZnSSe with Different Precursors

1995 ◽  
Vol 182-184 ◽  
pp. 419-422 ◽  
Author(s):  
J. Söllner ◽  
J. Schmoranzer ◽  
J. Woitok ◽  
H. Hamadeh ◽  
M. Heuken
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Aluminum incorporation into AlGaN grown by low-pressure metal organic vapor phase epitaxy

2006 ◽  
Vol 99 (10) ◽  
pp. 104901 ◽  
Author(s):  
G. S. Huang ◽  
H. H. Yao ◽  
T. C. Lu ◽  
H. C. Kuo ◽  
S. C. Wang
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Optical study of GaN:Mn co-doped with Mg grown by metal organic vapor phase epitaxy

2001 ◽  
Vol 308-310 ◽  
pp. 18-21 ◽  
Author(s):  
R.Y. Korotkov ◽  
J.M. Gregie ◽  
B. Han ◽  
B.W. Wessels
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Optical Study ◽  
Organic Vapor ◽  
Metal Organic ◽  
Co Doped

InGaN Laser Diodes Grown on SiC Substrate Using Low-Pressure Metal-Organic Vapor Phase Epitaxy

1997 ◽  
Vol 482 ◽  
Author(s):  
A. Kuramata ◽  
K. Domen ◽  
R. Soejima ◽  
K. Horino ◽  
S. Kubota ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Low Pressure ◽  
Threshold Current ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum ◽  
Magnesium Doping ◽  
Organic Vapor ◽  
Metal Organic

AbstractWe report the crystal growth and the characteristics of InGaN multiple quantum well (MQW) laser diodes grown on a 6H-SiC substrate using a low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). We discuss the buffer layer, the control of InGaN and AlGaN alloy composition, the magnesium doping of GaN and AlGaN, and the characteristics of the MQW structure. We also demonstrate the room-temperature pulsed operation of the laser diode. The threshold voltage was reduced to 15 V by improving the p-contact resistance. The threshold current was reduced to 500 mA by changing the MQW structure and employing high reflection coating.

InGaN Laser Diode Grown on 6H-SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy

1997 ◽  
Vol 36 (Part 2, No. 9A/B) ◽  
pp. L1130-L1132 ◽  
Author(s):  
Akito Kuramata ◽  
Kay Domen ◽  
Reiko Soejima ◽  
Kazuhiko Horino ◽  
Toshiyuki Tanahashi
Keyword(s):  
Laser Diode ◽  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic
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