Effects of buffer layer on formation of domain boundaries in epilayer during film growth of GaN by low-pressure metal–organic vapor phase epitaxy on sapphire substrates

1997 ◽  
Vol 71 (25) ◽  
pp. 3694-3696 ◽  
Author(s):  
Lisen Cheng ◽  
Ze Zhang ◽  
Guoyi Zhang ◽  
Dapeng Yu
Keyword(s):  
Buffer Layer ◽  
Vapor Phase ◽  
Film Growth ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Sapphire Substrates ◽  
Domain Boundaries ◽  
Metal Organic

Low-Pressure Metal-Organic-Vapor-Phase-Epitaxy (MOVPE) of ZnSSe with Different Precursors

1995 ◽  
Vol 182-184 ◽  
pp. 419-422 ◽  
Author(s):  
J. Söllner ◽  
J. Schmoranzer ◽  
J. Woitok ◽  
H. Hamadeh ◽  
M. Heuken
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Aluminum incorporation into AlGaN grown by low-pressure metal organic vapor phase epitaxy

2006 ◽  
Vol 99 (10) ◽  
pp. 104901 ◽  
Author(s):  
G. S. Huang ◽  
H. H. Yao ◽  
T. C. Lu ◽  
H. C. Kuo ◽  
S. C. Wang
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

InGaN Laser Diodes Grown on SiC Substrate Using Low-Pressure Metal-Organic Vapor Phase Epitaxy

1997 ◽  
Vol 482 ◽  
Author(s):  
A. Kuramata ◽  
K. Domen ◽  
R. Soejima ◽  
K. Horino ◽  
S. Kubota ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Low Pressure ◽  
Threshold Current ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum ◽  
Magnesium Doping ◽  
Organic Vapor ◽  
Metal Organic

AbstractWe report the crystal growth and the characteristics of InGaN multiple quantum well (MQW) laser diodes grown on a 6H-SiC substrate using a low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). We discuss the buffer layer, the control of InGaN and AlGaN alloy composition, the magnesium doping of GaN and AlGaN, and the characteristics of the MQW structure. We also demonstrate the room-temperature pulsed operation of the laser diode. The threshold voltage was reduced to 15 V by improving the p-contact resistance. The threshold current was reduced to 500 mA by changing the MQW structure and employing high reflection coating.

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