Far-infrared studies of two-dimensional random metal-insulator composites

1992 ◽  
Vol 46 (7) ◽  
pp. 4212-4221 ◽  
Author(s):  
T. W. Noh ◽  
P. H. Song ◽  
Sung-Ik Lee ◽  
D. C. Harris ◽  
J. R. Gaines ◽  
...  
Keyword(s):  
Far Infrared ◽  
Two Dimensional ◽  
Metal Insulator ◽  
Infrared Studies

Far-infrared studies of the metal-insulator transition in PrNiO3 and NdNiO3

1994 ◽  
Vol 235-240 ◽  
pp. 1289-1290 ◽  
Author(s):  
A. Wittlin ◽  
A.M. Gerrits ◽  
X. Granados ◽  
J.L. Garcia-Muñoz ◽  
J. Fontcuberta
Keyword(s):  
Far Infrared ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Infrared Studies

Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.

2017 ◽  
Author(s):  
Varun Bheemireddy
Keyword(s):  
Space Charge ◽  
High Performance ◽  
Numerical Study ◽  
2D Materials ◽  
Space Charge Density ◽  
Two Dimensional ◽  
Short Channel ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
New Family

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>

Crystal growth and metal-insulator transition in two-dimensional layered rare-earth palladates

2018 ◽  
Vol 2 (8) ◽  
Author(s):  
Yoshiko Nanao ◽  
Yoshiharu Krockenberger ◽  
Ai Ikeda ◽  
Yoshitaka Taniyasu ◽  
Michio Naito ◽  
...  
Keyword(s):  
Rare Earth ◽  
Crystal Growth ◽  
Insulator Transition ◽  
Two Dimensional ◽  
Metal Insulator Transition ◽  
Metal Insulator

Far-infrared magneto-optical study of two-dimensional electrons and holes in InAs/AlxGa1−xSb quantum wells

1997 ◽  
Vol 55 (3) ◽  
pp. 1617-1636 ◽  
Author(s):  
J. Kono ◽  
B. D. McCombe ◽  
J.-P. Cheng ◽  
I. Lo ◽  
W. C. Mitchel ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Far Infrared ◽  
Two Dimensional ◽  
Optical Study
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