Theory of laser-induced free-electron heating and impact ionization in wide-band-gap solids

1992 ◽  
Vol 46 (23) ◽  
pp. 15102-15115 ◽  
Author(s):  
D. Arnold ◽  
E. Cartier
Keyword(s):  
Band Gap ◽  
Free Electron ◽  
Impact Ionization ◽  
Wide Band ◽  
Wide Band Gap ◽  
Electron Heating

Hole initiated impact ionization in wide band gap semiconductors

1999 ◽  
Vol 86 (8) ◽  
pp. 4458-4463 ◽  
Author(s):  
Martin Reigrotzki ◽  
Ronald Redmer ◽  
Niels Fitzer ◽  
Stephen M. Goodnick ◽  
Manfred Dür ◽  
...  
Keyword(s):  
Band Gap ◽  
Impact Ionization ◽  
Wide Band ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors

Impact ionization and high-field effects in wide-band-gap semiconductors

2002 ◽  
Vol 314 (1-4) ◽  
pp. 52-54 ◽  
Author(s):  
M Reigrotzki ◽  
J.R Madureira ◽  
A Kuligk ◽  
N Fitzer ◽  
R Redmer ◽  
...  
Keyword(s):  
Band Gap ◽  
High Field ◽  
Impact Ionization ◽  
Wide Band ◽  
Wide Band Gap ◽  
Field Effects ◽  
Wide Band Gap Semiconductors

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Wide Band-Gap Kesterite Thin Films for Photovoltaic Applications

2018 ◽  
Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Photovoltaic Applications
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