Hole initiated impact ionization in wide band gap semiconductors

1999 ◽  
Vol 86 (8) ◽  
pp. 4458-4463 ◽  
Author(s):  
Martin Reigrotzki ◽  
Ronald Redmer ◽  
Niels Fitzer ◽  
Stephen M. Goodnick ◽  
Manfred Dür ◽  
...  
Keyword(s):  
Band Gap ◽  
Impact Ionization ◽  
Wide Band ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors

Impact ionization and high-field effects in wide-band-gap semiconductors

2002 ◽  
Vol 314 (1-4) ◽  
pp. 52-54 ◽  
Author(s):  
M Reigrotzki ◽  
J.R Madureira ◽  
A Kuligk ◽  
N Fitzer ◽  
R Redmer ◽  
...  
Keyword(s):  
Band Gap ◽  
High Field ◽  
Impact Ionization ◽  
Wide Band ◽  
Wide Band Gap ◽  
Field Effects ◽  
Wide Band Gap Semiconductors

A pathway to p-type wide-band-gap semiconductors

2009 ◽  
Vol 95 (17) ◽  
pp. 172109 ◽  
Author(s):  
Anderson Janotti ◽  
Eric Snow ◽  
Chris G. Van de Walle
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
P Type

scholarly journals Solid solubility of rare earth elements (Nd, Eu, Tb) in In2−xSnxO3 – effect on electrical conductivity and optical properties

2014 ◽  
Vol 43 (25) ◽  
pp. 9620-9632 ◽  
Author(s):  
T. O. L. Sunde ◽  
M. Lindgren ◽  
T. O. Mason ◽  
M.-A. Einarsrud ◽  
T. Grande
Keyword(s):  
Electrical Conductivity ◽  
Optical Properties ◽  
Rare Earth ◽  
Rare Earth Elements ◽  
Band Gap ◽  
Solid Solubility ◽  
Wide Band ◽  
Wide Band Gap ◽  
Recent Interest ◽  
Wide Band Gap Semiconductors

Wide band-gap semiconductors doped with luminescent rare earth elements (REEs) have attracted recent interest due to their unique optical properties.

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