Atomic bonding in amorphous hydrogenated silicon carbide alloys: A statistical thermodynamic approach

1992 ◽  
Vol 46 (20) ◽  
pp. 13119-13130 ◽  
Author(s):  
H. Efstathiadis ◽  
Z. Yin ◽  
F. W. Smith
Keyword(s):  
Silicon Carbide ◽  
Thermodynamic Approach ◽  
Statistical Thermodynamic ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon

Initial results and long-term clinical follow-up of an amorphous hydrogenated silicon-carbide-coated stent in daily practice

1998 ◽  
Vol 1 (2) ◽  
pp. 81-85
Author(s):  
Clara EE Hanekamp ◽  
Hans JRM Bonnier ◽  
Rolf H Michels ◽  
Kathinka H Peels ◽  
Eric PCM Heijmen ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Daily Practice ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Initial Results

DEPOSITION-AND-SUBSTRATE TUNABLE PHOTONIC BANDGAP IN OPTICAL RESPONSES OF HYDROGENATED AMORPHOUS SILICON CARBIDE THIN FILMS

2003 ◽  
Vol 17 (09) ◽  
pp. 387-392 ◽  
Author(s):  
NIKIFOR RAKOV ◽  
ARSHAD MAHMOOD ◽  
MUFEI XIAO
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Photonic Bandgap ◽  
Visible Spectrum ◽  
Incoherent Light ◽  
Hydrogenated Silicon ◽  
Optical Responses ◽  
Amorphous Hydrogenated Silicon ◽  
The Status ◽  
Two Parameters

Amorphous hydrogenated silicon carbide (a-SiC:H) thin films have been prepared by the RF reactive magnetron sputtering technique. The optical properties of the films have been studied by optical spectroscopy with an incoherent light source. The material is commonly regarded as a dielectric. We have discovered however that some films that were prepared under certain deposition conditions and on certain substrates may respond to external light as a metallic thin film, i.e. there are strongly enhanced reflection peaks in the optical spectrum. We have further discovered that some films may have a strong and broadened absorption peak at about 590 nm, which is an apparent photonic bandgap in the visible spectrum. The appearance of the photonic bandgap is very sensitive to two parameters: the substrate and the deposition gas. By changing the two parameters, one shifts the status of the film from with and without the photonic bandgap.

Growth Mechanism and Chemical Structure of Amorphous Hydrogenated Silicon Carbide (a-SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 1

2009 ◽  
Vol 15 (1-3) ◽  
pp. 39-46 ◽  
Author(s):  
Aleksander M. Wrobel ◽  
Agnieszka Walkiewicz-Pietrzykowska ◽  
Marja Ahola ◽  
I. Juhani Vayrynen ◽  
Francisco J. Ferrer-Fernandez ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Growth Mechanism ◽  
Chemical Structure ◽  
Microwave Plasma ◽  
Plasma Cvd ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Microwave Plasma Cvd

Bandgap Engineering of Amorphous Hydrogenated Silicon Carbide

MRS Advances ◽  
2016 ◽  
Vol 1 (43) ◽  
pp. 2929-2934 ◽  
Author(s):  
J. A. Guerra ◽  
L. M. Montañez ◽  
K. Tucto ◽  
J. Angulo ◽  
J. A. Töfflinger ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Urbach Energy ◽  
Amorphous Material ◽  
Deposition Process ◽  
Bandgap Energy ◽  
Bandgap Engineering ◽  
Hydrogenated Silicon ◽  
Hydrogen Dilution ◽  
Amorphous Hydrogenated Silicon ◽  
Proposed Model

ABSTRACTA simple model to describe the fundamental absorption of amorphous hydrogenated silicon carbide thin films based on band fluctuations is presented. It provides a general equation describing both the Urbach and Tauc regions in the absorption spectrum. In principle, our model is applicable to any amorphous material and it allows the determination of the bandgap. Here we focus on the bandgap engineering of amorphous hydrogenated silicon carbide layers. Emphasis is given on the role of hydrogen dilution during the deposition process and post deposition annealing treatments. Using the conventional Urbach and Tauc equations, it was found that an increase/decrease of the Urbach energy produces a shrink/enhancement of the Tauc-gap. On the contrary, the here proposed model provides a bandgap energy which behaves independently of the Urbach energy.

Carbon Local Bonding Configurations in Amorphous Hydrogenated Silicon-Carbon Alloys

1987 ◽  
Vol 95 ◽  
Author(s):  
Mark A. Petrich ◽  
Jeffrey A. Reimer
Keyword(s):  
Thin Films ◽  
Nuclear Magnetic Resonance ◽  
Silicon Carbide ◽  
Magnetic Resonance ◽  
Hydrogenated Silicon ◽  
Nmr Data ◽  
Amorphous Hydrogenated Silicon ◽  
Nmr Study ◽  
Silicon Carbon ◽  
Local Bonding

AbstractWe present the results of a carbon-13 nuclear magnetic resonance (NMR) study of well-characterized thin films of amorphous hydrogenated silicon carbide. The NMR data detail the distribution of carbon local bonding configurations in films which have carbon-to-silicon ratios less than one. In particular, we show data which clearly identify and quantify non-hydrogenated sp2, or unsaturated, carbon bonding environments.

An EELS and EXELFS study of amorphous hydrogenated silicon carbide

1994 ◽  
Vol 114-115 (1) ◽  
pp. 255-260 ◽  
Author(s):  
Allison Cook ◽  
Alexander G. Fitzgerald ◽  
Faridah Ibrahim ◽  
John I. B. Wilson ◽  
Philip John
Keyword(s):  
Silicon Carbide ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon
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