Real-space imaging ofCaxC60using scanning tunneling microscopy

1992 ◽  
Vol 46 (19) ◽  
pp. 12914-12917 ◽  
Author(s):  
Y. Z. Li ◽  
J. C. Patrin ◽  
M. Chander ◽  
J. H. Weaver ◽  
L. P. F. Chibante ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Real Space ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Real Space Observation of Double-Helix DNA Structure Using a Low Temperature Scanning Tunneling Microscopy

1999 ◽  
Vol 38 (Part 2, No. 6A/B) ◽  
pp. L606-L607 ◽  
Author(s):  
Takashi Kanno ◽  
Hiroyuki Tanaka ◽  
Tomohiko Nakamura ◽  
Hitoshi Tabata ◽  
Tomoji Kawai
Keyword(s):  
Low Temperature ◽  
Scanning Tunneling Microscopy ◽  
Double Helix ◽  
Dna Structure ◽  
Real Space ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Temperature Scanning

Surface Reconstructions of Strained Epitaxial CoSi2/Si(100) Layers Studied by Scanning Tunneling Microscopy.

1991 ◽  
Vol 237 ◽  
Author(s):  
R. Stalder ◽  
C. Schwarz ◽  
H. Sirringhaus ◽  
H. VON Känel
Keyword(s):  
Electron Diffraction ◽  
Scanning Tunneling Microscopy ◽  
High Energy ◽  
Real Space ◽  
Scanning Tunneling ◽  
High Energy Electron ◽  
Tunneling Microscopy ◽  
Detailed Surface ◽  
Surface Reconstructions

ABSTRACTEpitaxial single-domain CoSi2(100) layers were grown on Si(100) by use of a template technique. In-situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction (RHEED) were used for a detailed surface study. The (√2×√2)R45 reconstruction of the Co-rich “C-surface” and the (3√2×√2)R45 as well as a newly discovered (√2×√2)R45 of the Si-rich “S-surface” were resolved in real space and are discussed in detail. The transition from the C- to the S-surface above 500 °C is related to a (2×2) reconstruction.

Probing nucleation and growth phenomena on silicon surfaces by scanning tunneling microscopy/spectroscopy

1989 ◽  
Vol 47 ◽  
pp. 28-29
Author(s):  
R.J. Hamers ◽  
U.K. Kohler ◽  
K. Markert ◽  
J.E. Demuth
Keyword(s):  
Electronic Structure ◽  
Scanning Tunneling Microscopy ◽  
Chemical Reactivity ◽  
Real Space ◽  
Nucleation And Growth ◽  
Silicon Surfaces ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Surface Geometry ◽  
Local Electronic Structure

Nucleation and growth processes have long been studied using diffraction technique On semiconductor surfaces, localized defects strongly affect both the electron properties of the surfaces as well as their reactivity, therby affecting nucleat and growth. In order to identify the role of local electronic structure, and surface irregularities such as steps and defects, a real-space probe of electronic structure is needed. Scanning tunneling microscopy is capable of probing both the local surface geometry and local electronic structure, permitting adsorption and chemical reactivity to be studied on an atom-by-atom basis.

FROM "SOCCER-BALL" AND "RUGBY-BALL" TO GIANT FULLERENE MOLECULES: A SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY STUDY

1992 ◽  
Vol 06 (16n17) ◽  
pp. 967-999 ◽  
Author(s):  
TING CHEN ◽  
DROR SARID
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Real Space ◽  
Scanning Tunneling ◽  
Spectroscopy Study ◽  
Tunneling Microscopy ◽  
Metallic Substrates ◽  
Soccer Ball ◽  
Force Microscopy ◽  
Atomic Force ◽  
Monolayer Growth

Thin films of carbon fullerene molecules, Cn, prepared on metallic substrates are studied by scanning tunneling microscopy (STM) and atomic force microscopy (AFM) under both ambient and ultrahigh vacuum conditions. The STM and AFM images provide real-space atomic-resolution views of these fascinating molecules and their monolayer growth on metal surfaces which reflect both the intermolecular interactions and interactions with the underlying substrates.

scholarly journals X-ray Assisted Scanning Tunneling Microscopy and Its Applications for Materials Science: The First Results on Cu Doped ZrTe3

Crystals ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 588
Author(s):  
Hui Yan ◽  
Nozomi Shirato ◽  
Xiangde Zhu ◽  
Daniel Rosenmann ◽  
Xiao Tong ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Materials Science ◽  
Real Space ◽  
Current Status ◽  
Scanning Tunneling ◽  
X Rays ◽  
Tunneling Microscopy ◽  
X Ray ◽  
First Results ◽  
Specific Mapping

Synchrotron X-ray Scanning Tunneling Microscopy (SX-STM) is a novel imaging technique capable of providing real space chemically specific mapping with a potential of reaching atomic resolution. Determination of chemical composition along with ultra-high resolution imaging by SX-STM can be realized through excitation of core electrons by incident X-rays when their energy is tuned to an absorption edge of a particular atom during raster scanning, as is done in the conventional STM experiments. In this work, we provide a brief summary and the current status of SX-STM and discuss its applications for material science. In particular, we discuss instrumentation challenges associated with the SX-STM technique and present early experiments on Cu doped ZrTe3 single crystals.

“Stm” Scanning Tunneling Microscopy

1987 ◽  
Vol 45 ◽  
pp. 196-197
Author(s):  
J. A. Kubby
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Tunneling Current ◽  
Sample Surface ◽  
Real Space ◽  
Three Dimensions ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Scanned Image ◽  
Metal Tip ◽  
First Time

Scanning Tunneling Microscopy is a recently developed technique within the area of Scanned Image Microscopy that is based on tunneling between two conducting electrodes. This method offers, for the first time, the possibility of direct, real space determination of surface atomic and electronic structure in three dimensions on an atomic length scale, including nonperiodic structures.In this technique a sharp metal tip, mounted on a piezoelectric tripod that forms an orthogonal coordinate system, is brought to within a few Angstroms of the sample surface without “touching” the region to be scanned. A tunneling current I, on the order of 0.1 to 1 nA, is established by applying a bias between the tip and sample. The tunneling current is given to first order by;

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