Alloy-disorder-scattering-limited mobility of electrons in a superlattice

1992 ◽  
Vol 45 (16) ◽  
pp. 9169-9172 ◽  
Author(s):  
Partha Ray ◽  
P. K. Basu
Keyword(s):  
Limited Mobility ◽  
Alloy Disorder ◽  
Disorder Scattering

Interface roughness and alloy‐disorder scattering contributions to intersubband transition linewidths

1996 ◽  
Vol 69 (17) ◽  
pp. 2554-2556 ◽  
Author(s):  
K. L. Campman ◽  
H. Schmidt ◽  
A. Imamoglu ◽  
A. C. Gossard
Keyword(s):  
Interface Roughness ◽  
Intersubband Transition ◽  
Alloy Disorder ◽  
Disorder Scattering

Effect of Alloy Disorder Scattering on Electron Mobility Model for Strained-Si1-xGex/Si (101)

2011 ◽  
Vol 181-182 ◽  
pp. 364-369
Author(s):  
Cheng Wang ◽  
He Ming Zhang ◽  
Rong Xi Xuan ◽  
Hui Yong Hu
Keyword(s):  
Applied Stress ◽  
Electron Mobility ◽  
Physical Phenomenon ◽  
Mobility Model ◽  
Strained Si ◽  
Electron Effective Mass ◽  
Scattering Rate ◽  
Alloy Disorder ◽  
Strained Materials ◽  
Disorder Scattering

Si-based strained technology is currently an important topic of concern in the microelectronics field. The stress-induced enhancement of electron mobility contributes to the improved performance of Si-based strained devices. In this paper, Based on both the electron effective mass and the scattering rate models for strained-Si1-xGex/Si (101), an analytical electron mobility model for biaxial compressive strained-Si1-xGex /Si (101) is presented. The results show that the stress doesn’t make the electron mobility increased, but the electron mobility for [100] and [001] orientations decrease with increasing Ge fraction x, especially for [010] orientation expresses a sharp decrease. This physical phenomenon can be explained as: Although the applied stress (the higher the Ge fraction, the greater the applied stress) can enhance the electron mobility, alloy disorder scattering rate markedly increase. Overall the electron mobility decreases instead. The above result suggests that not all the mobilities for Si-based strained materials enhance with the stress applied. For the biaxial strained-SiGe material represented by Ge fraction, the effect of alloy disorder scattering on the enhancement of mobility must be concerned. The result can provide theoretical basis for the understanding of the improved physical characterizations and the enhanced mobility for Si-based strained materials.

Transport Properties of Two-Dimensional Electron Gas in Cubic AlGaN/GaN Heterostructures

2013 ◽  
Vol 873 ◽  
pp. 777-782
Author(s):  
Qian Feng ◽  
Peng Shi ◽  
Jie Zhao ◽  
Kai Du ◽  
Yu Kun Li ◽  
...  
Keyword(s):  
Theoretical Study ◽  
Electron Gas ◽  
Impurity Scattering ◽  
Interface Roughness ◽  
Dimensional Electron ◽  
Barrier Thickness ◽  
Al Content ◽  
Alloy Disorder ◽  
Dimensional Electron Gas ◽  
Disorder Scattering

We presented a theoretical study of the dependence of 2DEG mobility on temperature, barrier thickness, Al content, donor concentration to reveal the internal physics of 2DEG mobility in cubic AlGaN/GaNheterostructures. The 2DEG mobility is modeled as a combined effect of the scattering mechanisms including acoustic phonons, ionized impurity, dislocation, alloy disorder and interface roughness scattering.The variation of mobility results mainly from the change of 2DEG density and temperature. It reveals the dominant scattering mechanismsare dislocation and alloy disorder scattering atlow temperature.Acoustic phonons scattering becomes the major limit at 300k. Impurity scattering plays the key role when donor density rises. We find a maximum mobility with a structure of 25% Al content and 4-5nm barrier thickness.

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