Electron mobility in a SixGe1−xquantum well limited by alloy‐disorder scattering

1991 ◽  
Vol 70 (7) ◽  
pp. 3977-3979 ◽  
Author(s):  
Sajal K. Paul ◽  
P. K. Basu
Keyword(s):  
Electron Mobility ◽  
Alloy Disorder ◽  
Disorder Scattering

Effect of Alloy Disorder Scattering on Electron Mobility Model for Strained-Si1-xGex/Si (101)

2011 ◽  
Vol 181-182 ◽  
pp. 364-369
Author(s):  
Cheng Wang ◽  
He Ming Zhang ◽  
Rong Xi Xuan ◽  
Hui Yong Hu
Keyword(s):  
Applied Stress ◽  
Electron Mobility ◽  
Physical Phenomenon ◽  
Mobility Model ◽  
Strained Si ◽  
Electron Effective Mass ◽  
Scattering Rate ◽  
Alloy Disorder ◽  
Strained Materials ◽  
Disorder Scattering

Si-based strained technology is currently an important topic of concern in the microelectronics field. The stress-induced enhancement of electron mobility contributes to the improved performance of Si-based strained devices. In this paper, Based on both the electron effective mass and the scattering rate models for strained-Si1-xGex/Si (101), an analytical electron mobility model for biaxial compressive strained-Si1-xGex /Si (101) is presented. The results show that the stress doesn’t make the electron mobility increased, but the electron mobility for [100] and [001] orientations decrease with increasing Ge fraction x, especially for [010] orientation expresses a sharp decrease. This physical phenomenon can be explained as: Although the applied stress (the higher the Ge fraction, the greater the applied stress) can enhance the electron mobility, alloy disorder scattering rate markedly increase. Overall the electron mobility decreases instead. The above result suggests that not all the mobilities for Si-based strained materials enhance with the stress applied. For the biaxial strained-SiGe material represented by Ge fraction, the effect of alloy disorder scattering on the enhancement of mobility must be concerned. The result can provide theoretical basis for the understanding of the improved physical characterizations and the enhanced mobility for Si-based strained materials.

Interface roughness and alloy‐disorder scattering contributions to intersubband transition linewidths

1996 ◽  
Vol 69 (17) ◽  
pp. 2554-2556 ◽  
Author(s):  
K. L. Campman ◽  
H. Schmidt ◽  
A. Imamoglu ◽  
A. C. Gossard
Keyword(s):  
Interface Roughness ◽  
Intersubband Transition ◽  
Alloy Disorder ◽  
Disorder Scattering

Self-Consistent Subband Calculations of AlxGa1-xN/(AlN)/GaN-Based High Electron Mobility Transistor

2010 ◽  
Vol 159 ◽  
pp. 342-347 ◽  
Author(s):  
T.R. Lenka ◽  
A.K. Panda
Keyword(s):  
Conduction Band ◽  
Electron Mobility ◽  
High Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Self Consistent ◽  
Band Profile ◽  
Alloy Disorder ◽  
Rf Performance

In this paper, there is an attempt to present the two dimensional electron gas (2DEG) transport characteristics of AlxGa1-xN/(AlN)/GaN-based High Electron Mobility Transistor (HEMT) using a self-consistent numerical method for calculating the conduction-band profile and subband structure. The subband calculations take into account the piezoelectric and spontaneous polarization effects and the Hartree and exchange-correlation interaction. Here the dependency of conduction band profile, subband energies, 2DEG sheet concentration and sheet resistance on various Al mole fractions of AlxGa1-xN barrier layer are presented by incorporating simulation as well as available experimental data. Introduction of very thin binary AlN layer at the heterojunction of AlxGa1-xN/GaN resulting high mobility at high sheet charge densities by increasing the effective and decreasing alloy disorder scattering. Devices based on this structure exhibit good DC and RF performance as an increase of . Owing to high 2DEG density , the proposed device leads to operate in microwave and millimeter wave applications.

Doping-Dependent Nonlinear Electron Mobility in GaAs|In-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-As Coupled Quantum-Well Pseudo-Morphic MODFET Structure

2020 ◽  
Vol 54 (7) ◽  
pp. 676
Author(s):  
S.R. Panda ◽  
A. Sahu ◽  
S. Das ◽  
A.K. Panda ◽  
T. Sahu
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Energy Levels ◽  
Interface Roughness ◽  
Double Quantum ◽  
Double Quantum Well ◽  
Alloy Disorder

We analyze the asymmetric delta-doping dependence of nonlinear electron mobility μ of GaAs|InxGa1-xAs double quantum-well pseudo-morphic modulation doped field-effect transistor structure. We solve the Schrodinger and Poisson's equations self-consistently to obtain the sub-band energy levels and wave functions. We consider scatterings due to the ionized impurities (IMP), alloy disorder (AL), and interface roughness (IR) to calculate μ for a system having double sub-band occupancy, in which the inter-sub-band effects play an important role. Considering the doping concentrations in the barriers towards the substrate and surface sides as Nd1 and Nd2, respectively, we show that variation of Nd1 leads to a dip in μ near Nd1=Nd2, at which the resonance of the sub-band states occurs. A similar dip in μ as a function of Nd1 is also obtained at Nd1=Nd2 by keeping (Nd1+Nd2) unchanged. By increasing the central barrier width and well width, the dip in μ becomes sharp. We note that even though the overall μ is governed by the IMP- and AL-scatterings, the dip in μ is mostly affected through substantial variation of the sub-band mobilities due to IR-scattering near the resonance. Our results of nonlinear electron mobility near the resonance of sub-band states can be utilized for the performance analysis of GaAs|InGaAs pseudo-morphic quantum-well field-effect transistors. Keywords: asymmetric double quantum wells, GaAs|InxGa1-xAs structures, nonlinear electron mobility, pseudo-morphic HEMT structures, resonance of sub-band states.

Sign in / Sign up

Export Citation Format

Share Document