Calculation of the exciton binding energies in type-II GaAs/AlAs quantum-well structures: Application of the perturbation-variational expansion method

1992 ◽  
Vol 45 (11) ◽  
pp. 6271-6274 ◽  
Author(s):  
Spiros V. Branis ◽  
K. K. Bajaj
Keyword(s):  
Quantum Well ◽  
Expansion Method ◽  
Binding Energies ◽  
Type Ii ◽  
Quantum Well Structures ◽  
Variational Expansion

Type-I and type-II interband transitions in CdSe/ZnTe quantum well structures

1998 ◽  
Vol 108 (4) ◽  
pp. 205-209 ◽  
Author(s):  
J Haetty ◽  
E.H Lee ◽  
H Luo ◽  
A Petrou ◽  
J Warnock
Keyword(s):  
Quantum Well ◽  
Type I ◽  
Type Ii ◽  
Interband Transitions ◽  
Quantum Well Structures

scholarly journals Type II narrow double barrier quantum well structures : Γ-X coupling and interface effects

1993 ◽  
Vol 03 (C5) ◽  
pp. 225-228
Author(s):  
B. CHASTAINGT ◽  
G. NEU ◽  
C. DEPARIS ◽  
J. MASSIES ◽  
J. MARTINEZ-PASTOR ◽  
...  
Keyword(s):  
Quantum Well ◽  
Type Ii ◽  
Double Barrier ◽  
Quantum Well Structures ◽  
Interface Effects

Photoluminescence decay time studies of type‐II GaAs/AlAs quantum well structures

1989 ◽  
Vol 66 (11) ◽  
pp. 5639-5641 ◽  
Author(s):  
M. D. Sturge ◽  
Janet L. Mackay ◽  
Colette Maloney ◽  
J.K. Pribram
Keyword(s):  
Quantum Well ◽  
Decay Time ◽  
Type Ii ◽  
Quantum Well Structures ◽  
Photoluminescence Decay
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