Exciton, heavy-hole, and electrongfactors in type-I GaAs/AlxGa1−xAs quantum wells

1992 ◽  
Vol 45 (7) ◽  
pp. 3922-3925 ◽  
Author(s):  
M. J. Snelling ◽  
E. Blackwood ◽  
C. J. McDonagh ◽  
R. T. Harley ◽  
C. T. B. Foxon
Keyword(s):  
Quantum Wells ◽  
Heavy Hole ◽  
Type I

Excitonic Properties of ZnSe-ZnS Strained-Layer Superlattices and A Fibonacci Sequence

1989 ◽  
Vol 161 ◽  
Author(s):  
Tsunemasa Taguchi ◽  
Yoichi Yamada
Keyword(s):  
Quantum Wells ◽  
Heavy Hole ◽  
Thermal Dissociation ◽  
Thermal Quenching ◽  
Fibonacci Sequence ◽  
Type I ◽  
Strained Layer ◽  
Superlattice Structure ◽  
Hole Band ◽  
Excitonic Properties

ABSTRACTExcitonic properties of ZnSe-ZnS strained-layer quantum wells (SLQWs) with type I band lineups are reviewed on the basis of our recent results of temperature- and strain-dependent photoluminescence and absorption spectra. In order to estimate the conduction and valence band offsets as a function of ZnSe well thickness, we have modified the “model-solid” theory in which the valence bands (heavy-hole band in ZnSe and light-hole band in ZnS) are relatively moved with strains. Temperature and high excitation dependent studies of the n=1 heavy-hole excitons suggest a localization of excitons and reveals the important evidence on scatterings of excitons with acoustic and optical phonons. The thermal quenching of the exciton emission is caused by thermal dissociation of quasi-two-dimensional excitons through electrons and holes, from which the activation energy for this dissociation is 4 times larger than Ea.3D (a binding energy of bulk exciton) of ZnSe. A new superlattice structure with a quasiperiodic crystal which is derived from a finite Fibonacci sequence, has been fabricated by a low-pressure MOCVD method and its photoluminescence properties are for the first time introduced.

OPTICAL STUDIES OF TYPE I AND TYPE II RECOMBINATION IN GaAs-AlAs QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-525-C5-528 ◽  
Author(s):  
K. J. MOORE ◽  
P. DAWSON ◽  
C. T. FOXON
Keyword(s):  
Quantum Wells ◽  
Type I ◽  
Type Ii ◽  
Optical Studies

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

Feasibility Of Novel Si-Based Interminiband Lasers

1998 ◽  
Vol 533 ◽  
Author(s):  
Gregory Sun ◽  
Lionel Friedman ◽  
Richard A. Soref
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Population Inversion ◽  
Heavy Hole ◽  
Optical Gain ◽  
Laser Structure ◽  
Strained Si ◽  
Superlattice Structures ◽  
A Current

AbstractWe have designed a parallel interminiband lasing in superlattice structures of coherently strained Si0.5Ge0.5/Si quantum wells (QWs). Population inversion is achieved between the non-parabolic heavy-hole valence minibands locally in-k-space. Lasing transition is at 5.4μm. Our analysis indicates that an optical gain of 134/cm can be obtained when the laser structure is pumped with a current density of 5kA/cm2.

Excitonic properties of type-I and type-II Si∕Si1−xGex quantum wells

2007 ◽  
Vol 101 (11) ◽  
pp. 113703 ◽  
Author(s):  
Andrey Chaves ◽  
J. Costa e Silva ◽  
J. A. K. Freire ◽  
G. A. Farias
Keyword(s):  
Quantum Wells ◽  
Type I ◽  
Type Ii ◽  
Excitonic Properties

Type I–type II anticrossing and enhanced Stark effect in asymmetric coupled quantum wells

1988 ◽  
Vol 53 (26) ◽  
pp. 2584-2586 ◽  
Author(s):  
J. E. Golub ◽  
P. F. Liao ◽  
D. J. Eilenberger ◽  
J. P. Harbison ◽  
L. T. Florez ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Type I ◽  
Type Ii ◽  
Coupled Quantum Wells

2.8 μm emission from type-I quantum wells grown on InAsxP1−x/InP metamorphic graded buffers

2012 ◽  
Vol 101 (25) ◽  
pp. 251107 ◽  
Author(s):  
Daehwan Jung ◽  
Yuncheng Song ◽  
Lan Yu ◽  
Daniel Wasserman ◽  
Minjoo Larry Lee
Keyword(s):  
Quantum Wells ◽  
Type I

Exchange splitting of the heavy hole exciton ground state in GaAs-GaAlAs quantum wells

1990 ◽  
Vol 229 (1-3) ◽  
pp. 151-154 ◽  
Author(s):  
M. Potemski ◽  
J.C. Maan ◽  
A. Fasolino ◽  
K. Ploog ◽  
G. Weimann
Keyword(s):  
Quantum Wells ◽  
Ground State ◽  
Heavy Hole ◽  
Exchange Splitting ◽  
Exciton Ground State

Type II Band Alignment inSi1−xGex/Si(001)Quantum Wells: The Ubiquitous Type I Luminescence Results from Band Bending

1997 ◽  
Vol 79 (2) ◽  
pp. 269-272 ◽  
Author(s):  
M. L. W. Thewalt ◽  
D. A. Harrison ◽  
C. F. Reinhart ◽  
J. A. Wolk ◽  
H. Lafontaine
Keyword(s):  
Quantum Wells ◽  
Band Alignment ◽  
Type I ◽  
Type Ii ◽  
Band Bending

Polarization selection rules for quantum beating between light- and heavy-hole excitons in GaAs quantum wells

1995 ◽  
Vol 94 (5) ◽  
pp. 373-377 ◽  
Author(s):  
G.O. Smith ◽  
E.J. Mayer ◽  
V. Heuckeroth ◽  
J. Kuhl ◽  
K. Bott ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Heavy Hole ◽  
Selection Rules
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