ArF-excimer-laser-induced emission and absorption bands in fused silica synthesized under oxidizing conditions

1992 ◽  
Vol 45 (5) ◽  
pp. 2050-2054 ◽  
Author(s):  
Nobu Kuzuu ◽  
Yoshikazu Komatsu ◽  
Masataka Murahara
Keyword(s):  
Excimer Laser ◽  
Fused Silica ◽  
Absorption Bands ◽  
Arf Excimer Laser

Excimer Laser Induced 5.8 eV Absorption and 1.9 eV Emission Bands in Fused Silicas

1991 ◽  
Vol 244 ◽  
Author(s):  
Nobu Kuzuu ◽  
Yasutaka Matsumoto ◽  
Masataka Murahara
Keyword(s):  
Absorption Band ◽  
Excimer Laser ◽  
Fused Silica ◽  
Absorption Bands ◽  
Type Iii ◽  
Arf Excimer Laser ◽  
The Creation ◽  
The Difference ◽  
Order Structures ◽  
Reducing Condition

ABSTRACTCharacteristics of ArF excimer laser induced 1.9 eV emission and 5.8 eV absorption bands in type III and soot remelted silicas were investigated. In a type III silica synthesized in a reducing condition, an absorption band at 5.8 eV band is induced. The creation of this band can be prevented by annealing in an atmosphere of He. In the soot remelted silicas with and without OH, the creation of the 5.8 eV band is strongly promoted by annealing in H2. An emission band at 1.9 eV is induced in a type III fused silica synthesized in an oxydizing condition and soot remelted silica containing OH. When annealing in He, creation of the 1.9 eV band is strongly promoted in the former but suppressed in the latter sample. This difference is derived from the difference of higher order structures between the type III and the soot remelted silicas.

Fabrication Fluoride High Reflection Mirror by Thermal Evaporation in the ArF Excimer Laser

2013 ◽  
Vol 552 ◽  
pp. 252-255
Author(s):  
Yan He Chang ◽  
Chun Shui Jin ◽  
Chun Li ◽  
Jing Cheng Jin
Keyword(s):  
Excimer Laser ◽  
Thermal Evaporation ◽  
Optical Loss ◽  
Single Layer ◽  
Laser Cavity ◽  
Fused Silica ◽  
Scattering Loss ◽  
Arf Excimer Laser ◽  
Laser Induced Damage ◽  
High Reflection

ArF excimer laser is the main light resource for the microlithography technology. In the laser cavity, the optical components with lowest absorption and scattering loss are necessary. As a consequence only a few materials are promising candidates for 193nm coatings with high transmittance or high reflectance. Fluoride films exhibit relatively low optical loss as well as high laser induced damage thresholds. The potentiality of LaF3 and MgF2 is evaluated in respect of the production of improved optical coatings for applications. For this purpose, single layer is prepared by thermal evaporation at the deposited temperatures of 523K on Fused Silica. A first order bulk inhomogeneity model for extracting the optical constants of weak absorbing film is applied, which is based on spectrophotometry. Refractive index (n) and extinction coefficient (k) of the optimal LaF3 film are 1.678 and 2.24×10-3 at 193nm. In the case of the optimal MgF2 film, n and k are 1.443 and 4.72×10-4 at 193nm. High reflection (HR) LaF3/MgF2 coatings are designed and fabricated for normal incident on CaF2. The experimental results indicate that after coated and fluoride coatings deposit, according to optimal process, can have more suitable optical properties at deep ultraviolet (DUV), the reflectance of HR coatings reaches more than 98% at 193nm.

Modification of Fused Silica Materials for Excimer Laser Optics—measurement of laser induced defects and its reformation—

1992 ◽  
Vol 279 ◽  
Author(s):  
Yasutaka Matsumoto ◽  
Yoshihiro Yoshikado ◽  
Masataka Murahara
Keyword(s):  
Absorption Band ◽  
Excimer Laser ◽  
Laser Processing ◽  
Fused Silica ◽  
Laser Lithography ◽  
Silica Materials ◽  
Laser Optics ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
Induced Defects

ABSTRACTFused silica is widely used material in window and lens applications for excimer laser processing. The transmittance of the laser beam in fused silica is attenuated approximately 40% by high fluence ArF excimer laser irradiation. The attenuation of the transmittance corresponds to the growth of an absorption band at 215nm. This phenomenon is troublesome for laser lithography. To investigate this effect, we examined the laser induced luminescence and absorption under various conditions. The 215nm absorption band was diminished by annealing at 900 °C for 2 hours in He ambient. Ke could successfully obtain good optical material, whose transmittance remains constant with increasing ArF laser(193nm) shot exposure.

Sign in / Sign up

Export Citation Format

Share Document