Theory of interfacial stability of semiconductor superlattices

1992 ◽  
Vol 45 (24) ◽  
pp. 14177-14188 ◽  
Author(s):  
David B. Laks ◽  
Alex Zunger
1984 ◽  
Vol 45 (C5) ◽  
pp. C5-131-C5-137 ◽  
Author(s):  
M. V. Klein ◽  
C. Colvard ◽  
R. Fischer ◽  
H . Morkoç

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-183-C5-186
Author(s):  
J. BLEUSE ◽  
P. VOISIN ◽  
M. VOOS ◽  
L. L. CHANG ◽  
L. ESAKI

2021 ◽  
Vol 138 ◽  
pp. 107725
Author(s):  
Sanni Kumar ◽  
Suryasnata Tripathy ◽  
Om Krishan Singh ◽  
Shiv Govind Singh

1997 ◽  
Vol 481 ◽  
Author(s):  
Matthew T. Johnson ◽  
Shelley R. Gilliss ◽  
C. Barry Carter

ABSTRACTThin films of In2O3 and Fe2O3 have been deposited on (001) MgO using pulsed-laser deposition (PLD). These thin-film diffusion couples were then reacted in an applied electric field at elevated temperatures. In this type of solid-state reaction, both the reaction rate and the interfacial stability are affected by the transport properties of the reacting ions. The electric field provides a very large external driving force that influences the diffusion of the cations in the constitutive layers. This induced ionic current causes changes in the reaction rates, interfacial stability and distribution of the phases. Through the use of electron microscopy techniques the reaction kinetics and interface morphology have been investigated in these spinel-forming systems, to gain a better understanding of the influence of an electric field on solid-state reactions.


2021 ◽  
Vol 415 ◽  
pp. 125624
Author(s):  
Jia Liu ◽  
Yixuan Zhang ◽  
Kaiming Peng ◽  
Xia Zhao ◽  
Yuan Xiong ◽  
...  

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