Optical nonlinearities in mixed type I–type II GaAs/AlAs multiple quantum wells

1992 ◽  
Vol 45 (23) ◽  
pp. 13499-13508 ◽  
Author(s):  
I. Galbraith ◽  
P. Dawson ◽  
C. T. Foxon
Keyword(s):  
Quantum Wells ◽  
Mixed Type ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type I ◽  
Optical Nonlinearities ◽  
Type Ii

Indirect barrier electron-hole gas transitions in mixed type-I–type-II GaAs/AlAs multiple quantum wells

2001 ◽  
Vol 64 (3) ◽  
Author(s):  
R. Guliamov ◽  
E. Lifshitz ◽  
E. Cohen ◽  
Arza Ron ◽  
L. N. Pfeiffer
Keyword(s):  
Quantum Wells ◽  
Mixed Type ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type I ◽  
Type Ii ◽  
Electron Hole

Magnetic-field induced type I-type II transition in multiple quantum wells

1996 ◽  
Vol 159 (1-4) ◽  
pp. 967-971 ◽  
Author(s):  
Shinji Kuroda ◽  
Kazutoshi Kojima ◽  
Kôki Takita ◽  
Kazuhito Uchida ◽  
Noboru Miura
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type I ◽  
Type Ii

Picosecond dynamics of spin-related optical nonlinearities in InxGa1−xAs multiple quantum wells at 1064 nm

2004 ◽  
Vol 84 (7) ◽  
pp. 1043-1045 ◽  
Author(s):  
K. Jarasiunas ◽  
V. Gudelis ◽  
R. Aleksiejunas ◽  
M. Sudzius ◽  
S. Iwamoto ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optical Nonlinearities

Optical characterization of type-II ZnO/ZnS multiple quantum wells grown by atomic layer deposition

2020 ◽  
Vol 694 ◽  
pp. 137740 ◽  
Author(s):  
Mostafa Afifi Hassan ◽  
Aadil Waseem ◽  
Muhammad Ali Johar ◽  
Sou Young Yu ◽  
June Key Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Optical Characterization ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type Ii ◽  
Layer Deposition

Photoluminescence Studies of [(CdSe)1(ZnSe)2]9-ZnSeTe Multiple Quantum Wells Under High Pressure

1994 ◽  
Vol 358 ◽  
Author(s):  
Z.P. Wang ◽  
Z.X. Liu ◽  
H.X. Han ◽  
J.Q. Zhang ◽  
G.H. Li ◽  
...  
Keyword(s):  
High Pressure ◽  
Quantum Wells ◽  
Liquid Nitrogen Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type I ◽  
Short Period ◽  
Heavy Hole Subband ◽  
Photoluminescence Studies ◽  
Increasing Temperature

ABSTRACTWe have performed photoluminescence (PL) measurements at liquid nitrogen temperature under high pressure up to 5.5 GPa and in the temperature range 10-300 K at atmospheric pressure on {(ZnSe)30(ZnSe0.92Te0.08)30(ZnSe)30[(CdSe)1(ZnSe)2]9}x5 multiple quantum wells. The PL peaks, EB, E1 and Ew corresponding to the band edge luminescence in ZnSe barrier layer, the transitions from the first conduction subband to the heavy-hole subband in ZnSe0.92Te0.08 layers and [(CdSe)1(ZnSe)2]9 ultra short period superlattice quantum well (SPSLQW) layers have been observed. Experimental results show that ZnSe0.92Te0.08/ZnSe forms a type-I superlattice (SL) in contrast to the type-II ZnSe/ZnTe SL. The pressure coefficients of the EB, E1 and Ew exciton peaks have been determined as 67, 63 and 56 meV/GPa, respectively. With increasing temperature (or pressure), the E1 peak-intensity drastically decreases which is attributed to the thermal effect (or the appearance of many defects in ZnSe0.92Te0.08 under higher pressure).

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