Ultrafast optical nonlinearities of type II AlxGa1−xAs/AlAs multiple quantum wells

1990 ◽  
Vol 57 (15) ◽  
pp. 1520-1522 ◽  
Author(s):  
J. Feldmann ◽  
E. Göbel ◽  
K. Ploog
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optical Nonlinearities ◽  
Type Ii ◽  
Ultrafast Optical

Optical nonlinearities in mixed type I–type II GaAs/AlAs multiple quantum wells

1992 ◽  
Vol 45 (23) ◽  
pp. 13499-13508 ◽  
Author(s):  
I. Galbraith ◽  
P. Dawson ◽  
C. T. Foxon
Keyword(s):  
Quantum Wells ◽  
Mixed Type ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type I ◽  
Optical Nonlinearities ◽  
Type Ii

Picosecond dynamics of spin-related optical nonlinearities in InxGa1−xAs multiple quantum wells at 1064 nm

2004 ◽  
Vol 84 (7) ◽  
pp. 1043-1045 ◽  
Author(s):  
K. Jarasiunas ◽  
V. Gudelis ◽  
R. Aleksiejunas ◽  
M. Sudzius ◽  
S. Iwamoto ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optical Nonlinearities

Optical characterization of type-II ZnO/ZnS multiple quantum wells grown by atomic layer deposition

2020 ◽  
Vol 694 ◽  
pp. 137740 ◽  
Author(s):  
Mostafa Afifi Hassan ◽  
Aadil Waseem ◽  
Muhammad Ali Johar ◽  
Sou Young Yu ◽  
June Key Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Optical Characterization ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type Ii ◽  
Layer Deposition

Optical nonlinearities in multiple quantum wells: New insight on band-gap renormalization

1988 ◽  
Vol 38 (18) ◽  
pp. 13443-13446 ◽  
Author(s):  
J. A. Levenson ◽  
I. Abram ◽  
R. Raj ◽  
G. Dolique ◽  
J. L. Oudar ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optical Nonlinearities

TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE OF FLAT AND UNDULATED SiGe/Si MULTIPLE QUANTUM WELLS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4211-4214 ◽  
Author(s):  
B. W. CHENG ◽  
J. G. ZHANG ◽  
Y. H. ZUO ◽  
R. W. MAO ◽  
C. J. HUANG ◽  
...  
Keyword(s):  
Elevated Temperature ◽  
Quantum Wells ◽  
Blue Shift ◽  
Band Alignment ◽  
Multiple Quantum Wells ◽  
Luminescence Spectra ◽  
Multiple Quantum ◽  
Type Ii ◽  
Thermally Activated ◽  
Strained Sige

Photoluminescence (PL) of strained SiGe/Si multiple quantum wells (MQW) with flat and undulated SiGe well layers was studied at different temperature. With elevated temperature from 10K, the no-phonon (NP) peak of the SiGe layers in the flat samples has firstly a blue shift due to the dominant transition converting from bound excitons (BE) to free excitons (FE), and then has a red shift when the temperature is higher than 30K because of the narrowing of the band gap. In the undulated sample, however, monotonous blue shift was observed as the temperature was elevated from 10 K to 287 K. The thermally activated electrons, confined in Si due to type-II band alignment, leak into the SiGe crest regions, and the leakage is enhanced with the elevated temperature. It results in a blue shift of the SiGe luminescence spectra.

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