Generalized semiclassical model for the density of states in heavily doped semiconductors

1991 ◽  
Vol 44 (23) ◽  
pp. 12822-12829 ◽  
Author(s):  
P. Van Mieghem ◽  
G. Borghs ◽  
R. Mertens
1982 ◽  
Vol 25 (4) ◽  
pp. 2776-2780 ◽  
Author(s):  
V. Sa-yakanit ◽  
W. Sritrakool ◽  
H. R. Glyde

1972 ◽  
Vol 50 (2) ◽  
pp. 165-170 ◽  
Author(s):  
J. S. Lass

Negative magnetoresistance observed in many heavily doped semiconductors is considered as due to a change in the population of states for which the product Δ(E) of the mobility and the density of states varies rapidly with energy. A logarithmic form of Δ(E) is found to give an excellent fit to experimental data which can thereby be described as a simple function of H/(T + θ). The form of Δ(E) suggests that the Fermi level lies in a conduction-band tail with a width of 2kθ, typically 0.2 meV for Ge and CdS. Possible repopulation mechanisms are considered.


2021 ◽  
Vol 103 (11) ◽  
Author(s):  
Federico De Luca ◽  
Michele Ortolani ◽  
Cristian Ciracì

1969 ◽  
Vol 183 (3) ◽  
pp. 773-776 ◽  
Author(s):  
D. F. Holcomb ◽  
J. J. Rehr

1993 ◽  
Vol 48 (23) ◽  
pp. 17121-17127 ◽  
Author(s):  
Kjeld O. Jensen ◽  
J. M. Rorison ◽  
Alison B. Walker

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