Impurity-band density of states in heavily doped semiconductors: Numerical results

1982 ◽  
Vol 25 (4) ◽  
pp. 2776-2780 ◽  
Author(s):  
V. Sa-yakanit ◽  
W. Sritrakool ◽  
H. R. Glyde
Keyword(s):  
Density Of States ◽  
Impurity Band ◽  
Numerical Results ◽  
Doped Semiconductors ◽  
Heavily Doped

HEAVILY DOPED HARMONIC CONFINED QUANTUM WIRES

1992 ◽  
Vol 06 (29) ◽  
pp. 1881-1885
Author(s):  
I.C. DA CUNHA LIMA ◽  
A. FERREIRA DA SILVA
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Density Of States ◽  
Gate Voltage ◽  
Quantum Wires ◽  
Impurity Band ◽  
Semiconductor Heterostructures ◽  
One Dimensional ◽  
Impurity Density ◽  
Heavily Doped

Quasi-one-dimensional channels have already been fabricated by holographic lithography on semiconductor heterostructures. We study the formation of an impurity band for shallow donors located inside the channels assuming they have been created by applying a modulated gate voltage in a quantum well of AlxGa1−xAs−GaAs. We calculate the changes in the impurity density of states as a function of the gate voltage. It is shown that the increase of the applied gate voltage leads to higher binding energy and larger impurity bandwidth.

The Fermi energy and screening length in n-type GaAs

1982 ◽  
Vol 60 (3) ◽  
pp. 373-378 ◽  
Author(s):  
W. Sritrakool ◽  
H. R. Glyde ◽  
V. Sa-Yakanit
Keyword(s):  
Density Of States ◽  
Fermi Energy ◽  
Impurity Band ◽  
Band Tail ◽  
Screening Length ◽  
Thomas Fermi ◽  
Low Energies ◽  
Heavily Doped

The Fermi energy, EF, and the screening length, Q−1, in heavily doped n-type GaAs are calculated using the impurity band tail density of states derived recently by Sa-yakanit and Glyde. This density of states agrees with Halperin and Lax's result at low energies and can be extended to higher energies. The resulting EF and Q−1 agree well with values computed by Hwang using the Halperin and Lax density plus a somewhat arbitrary extrapolation. Compensation with attractive impurities is also introduced to lower EF and increase its sensitivity to the band tail density of states. However, EF can be lowered only a little without violating the Thomas–Fermi approximation upon which the concept of a screening length is based.

Negative Magnetoresistance in Semiconductors with Overlapping Impurity and Conduction Bands

1972 ◽  
Vol 50 (2) ◽  
pp. 165-170 ◽  
Author(s):  
J. S. Lass
Keyword(s):  
Experimental Data ◽  
Fermi Level ◽  
Conduction Band ◽  
Density Of States ◽  
Simple Function ◽  
Negative Magnetoresistance ◽  
Band Tail ◽  
Doped Semiconductors ◽  
Conduction Bands ◽  
Heavily Doped

Negative magnetoresistance observed in many heavily doped semiconductors is considered as due to a change in the population of states for which the product Δ(E) of the mobility and the density of states varies rapidly with energy. A logarithmic form of Δ(E) is found to give an excellent fit to experimental data which can thereby be described as a simple function of H/(T + θ). The form of Δ(E) suggests that the Fermi level lies in a conduction-band tail with a width of 2kθ, typically 0.2 meV for Ge and CdS. Possible repopulation mechanisms are considered.

A simplified approach to impurity-band tails in heavily doped semiconductors

1983 ◽  
Vol 98 (5-6) ◽  
pp. 273-276 ◽  
Author(s):  
P. Chaiyasith ◽  
S. Kokpol ◽  
V. Sa-Yakanit
Keyword(s):  
Impurity Band ◽  
Doped Semiconductors ◽  
Simplified Approach ◽  
Heavily Doped ◽  
Band Tails

Generalized semiclassical model for the density of states in heavily doped semiconductors

1991 ◽  
Vol 44 (23) ◽  
pp. 12822-12829 ◽  
Author(s):  
P. Van Mieghem ◽  
G. Borghs ◽  
R. Mertens
Keyword(s):  
Density Of States ◽  
Doped Semiconductors ◽  
Semiclassical Model ◽  
Heavily Doped
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