Temperature dependence of the electron drift mobility in doped and undoped amorphous silicon

1991 ◽  
Vol 44 (23) ◽  
pp. 12806-12808 ◽  
Author(s):  
D. K. Sharma ◽  
K. L. Narasimhan ◽  
N. Periasamy ◽  
D. R. Bapat
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Drift Mobility ◽  
Electron Drift ◽  
Electron Drift Mobility

scholarly journals Modulated photoconductivity study of electron drift mobility in amorphous silicon

2000 ◽  
Vol 87 (6) ◽  
pp. 2901-2909 ◽  
Author(s):  
K. Hattori ◽  
M. Iida ◽  
T. Hirao ◽  
H. Okamoto
Keyword(s):  
Amorphous Silicon ◽  
Drift Mobility ◽  
Electron Drift ◽  
Electron Drift Mobility

Electron Drift Mobility in a-Si:H Prepared by Hot-Wire Deposition

1995 ◽  
Vol 377 ◽  
Author(s):  
Qing Gu ◽  
E. A. Schiff ◽  
R. S. Crandall ◽  
E. Iwaniczko ◽  
B. Nelson
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Time Of Flight ◽  
Drift Mobility ◽  
Electron Drift ◽  
Hot Wire ◽  
Initial Work ◽  
Normal Glow Discharge ◽  
Silicon Based ◽  
Electron Drift Mobility

ABSTRACTWe have measured the electron drift mobility in a-Si:H prepared by hot wire (HW) deposition using photocarrier time-of-flight. Initial work has shown that light-soaked HW material can have much better ambipolar diffusion lengths than the plasma-deposited material following extended light soaking. In a sample with about 2% H-concentration in the intrinsic layer, we find that the electron drift mobility is quite different from that of a-Si:H alloys prepared by normal glow-discharge CVD, even allowing for the reduced bandgap of the hot Wire material. This result challenges the principle that the bandgap of optimized amorphous silicon based material is sufficient to predict the electron drift mobility.

Sign in / Sign up

Export Citation Format

Share Document