Hydrogen bonding in amorphous silicon with use of the low-pressure chemical-vapor-deposition technique

1991 ◽  
Vol 43 (8) ◽  
pp. 6627-6632 ◽  
Author(s):  
G. Amato ◽  
G. Della Mea ◽  
F. Fizzotti ◽  
C. Manfredotti ◽  
R. Marchisio ◽  
...  
Keyword(s):  
Hydrogen Bonding ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Deposition Technique ◽  
Chemical Vapor Deposition Technique ◽  
Vapor Deposition Technique ◽  
Pressure Chemical

The Influence of Electrons From the Filament on the Material Properties of Hydrogenated Amorphous Silicon Grown by the Hot-Wire Chemical Vapor Deposition Technique

1998 ◽  
Vol 507 ◽  
Author(s):  
Brent P. Nelson ◽  
Qi Wang ◽  
Eugene Iwaniczko ◽  
A.H. Mahan ◽  
R.S. Crandall
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Material Properties ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Deposition Technique ◽  
Chemical Vapor Deposition Technique ◽  
Vapor Deposition Technique ◽  
Hydrogenated Amorphous

ABSTRACTWe observe that under certain conditions, hydrogenated amorphous silicon grown by the hotwire chemical-vapor deposition technique has dark conductivities varying by several orders of magnitude across the same film. Similarly, the ambipolar diffusion lengths fluctuate significantly in these films, yet there is not much evidence of a corresponding structural change. We attribute this electronic nonuniformity to electrons from the filament reaching insulating substrates and charging the substrate negatively in some regions, thus causing films to grow with inferior material properties in those regions. The effect diminishes with increasing substrate temperature, where the film itself may be conductive enough to remove charge reaching the growing surface. Wellgrounded, conducting substrates seem to be immune from this effect. We reduce this effect by putting a conductive grid on insulating substrates, of close enough spacing to remove the charge, and measure the material properties of the film grown between the conductive elements of the grid.

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