Optical study of the electronic states ofIn0.53Ga0.47As/In0.52Al0.48As quantum wells in high electric fields

1991 ◽  
Vol 43 (3) ◽  
pp. 2263-2271 ◽  
Author(s):  
K. Satzke ◽  
G. Weiser ◽  
W. Stolz ◽  
K. Ploog
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Electronic States ◽  
Optical Study ◽  
High Electric Fields

Photoluminescence study of undoped‐like GaAs/AlGaAs quantum wells in high electric fields

1993 ◽  
Vol 74 (2) ◽  
pp. 1188-1194
Author(s):  
Naoteru Shigekawa ◽  
Tomofumi Furuta ◽  
Kunihiro Arai ◽  
Masaaki Tomizawa
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Photoluminescence Study ◽  
High Electric Fields

Photoluminescence from GaAs quantum wells under high electric fields

1986 ◽  
Vol 59 (11) ◽  
pp. 3925-3927 ◽  
Author(s):  
Janet L. Pan ◽  
Ralph A. Höpfel ◽  
Jagdeep Shah
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
High Electric Fields

Tunnel radiation in the luminescence spectra of GaN-based heterostructures

2002 ◽  
Vol 743 ◽  
Author(s):  
A. E. Yunovich ◽  
V. E. Kudryashov ◽  
A. N. Turkin ◽  
M. Leroux ◽  
S. Dalmasso
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Spectral Band ◽  
Luminescence Spectra ◽  
Energy Diagram ◽  
Radiation Spectra ◽  
Piezoelectric Fields ◽  
High Electric Fields ◽  
Tunnel Effects ◽  
Ingan Quantum Wells

ABSTRACTTunnel effects in luminescence spectra and electrical properties of LEDs based on InGaN/GaN-heterostructures made by different technological groups were studied. The tunnel radiation in a spectral region of 1.9 - 2.7 eV predominates at low currents (J<0.2 mA). The position of the tunnel luminescence maximum orħħωmax is approximately equal to the voltage U, orħħωmax = eU. The low energy spectral band is described by the theory of tunnel radiative recombination. Tunnel recombination mechanisms in GaN-based heterostructures are caused by high electric fields in the active InGaN/GaN - MQW layers. The energy diagram of the structures is analyzed. The probability of tunnel radiation is higher due to piezoelectric fields in InGaN quantum wells. The tunnel radiation spectral band was not observed in the more effective LEDs with modulated doped MQWs. The spectra of GaN-based LEDs are compared with tunnel radiation spectra of GaAs-, InP- and GaSb- based LEDs. The equation: orħħωmax = eU describes experimental data in various semiconductors in the range 0.5–2.7 eV.

Quantum Confined Stark Effect in InGaAs/GaAs Quantum Wells under High Electric Fields

1995 ◽  
Vol 191 (1) ◽  
pp. 155-159 ◽  
Author(s):  
J. Kavaliauskas ◽  
G. Krivaite ◽  
A. Galickas ◽  
I. Šimkiene ◽  
U. Olin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Stark Effect ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined ◽  
High Electric Fields

scholarly journals Strongly correlated indirect excitons in quantum wells in high electric fields

2006 ◽  
Vol 35 ◽  
pp. 197-208 ◽  
Author(s):  
Alexei Filinov ◽  
Patrick Ludwig ◽  
Yurii E Lozovik ◽  
Michael Bonitz ◽  
Heinrich Stolz
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Strongly Correlated ◽  
Indirect Excitons ◽  
High Electric Fields

Drift velocity of electrons in quantum wells in high electric fields

2009 ◽  
Vol 43 (4) ◽  
pp. 458-462 ◽  
Author(s):  
V. G. Mokerov ◽  
I. S. Vasil’evskii ◽  
G. B. Galiev ◽  
J. Požela ◽  
K. Požela ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Drift Velocity ◽  
High Electric Fields

scholarly journals The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Jorge Quereda ◽  
Jan Hidding ◽  
Talieh S. Ghiasi ◽  
Bart J. van Wees ◽  
Caspar H. van der Wal ◽  
...  
Keyword(s):  
Electric Fields ◽  
Mechanical Strain ◽  
Electronic States ◽  
Normal Incidence ◽  
Schottky Contacts ◽  
Schottky Barriers ◽  
Transition Metal Dichalcogenide ◽  
Tunnel Barriers ◽  
High Electric Fields

AbstractCircular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet fully understood. In particular, the emergence of CPGE is not compatible with the D3h crystal symmetry of two-dimensional TMDs, and should only be possible if the symmetry of the electronic states is reduced by influences such as an external electric field or mechanical strain. Schottky contacts, nearly ubiquitous in TMD-based transistors, can provide the high electric fields causing a symmetry breaking in the devices. Here, we investigate the effect of these Schottky contacts on the CPC by characterizing the helicity-dependent photoresponse of monolayer MoSe2 devices both with direct metal-MoSe2 Schottky contacts and with h-BN tunnel barriers at the contacts. We find that, when Schottky barriers are present in the device, additional contributions to CPC become allowed, resulting in emergence of CPC for illumination at normal incidence.

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