Optical-phonon study of single crystals of various layered cuprates and related materials: Evidence of unique electron-phonon coupling in theCuO2plane

1991 ◽  
Vol 43 (13) ◽  
pp. 10496-10507 ◽  
Author(s):  
S. Tajima ◽  
T. Ido ◽  
S. Ishibashi ◽  
T. Itoh ◽  
H. Eisaki ◽  
...  
2000 ◽  
Vol 14 (25n27) ◽  
pp. 2840-2845 ◽  
Author(s):  
R. S. GONNELLI ◽  
A. MORELLO ◽  
G. A. UMMARINO ◽  
V. A. STEPANOV ◽  
G. BEHR ◽  
...  

Resistivity measurements from 4.2 K up to 300 K were made on YNi 2 B 2 C single crystals with T c = 15.5 K . The resulting ρ(T) curve shows a perfect Bloch-Grüneisen (BG) behavior, with a very small residual resistivity which indicates the low impurity content and the high cristallographic quality of the samples. The value λ tr = 0.53 for the transport electron-phonon coupling constant was obtained by using the high-temperature constant value of d ρ/ d T and the plasma frequency reported in literature. The BG expression for the phononic part of the resistivity ρ ph (T) was then used to fit the data in the whole temperature range, by approximating [Formula: see text] with the experimental phonon spectral density G(Ω) multiplied by a two-step weighting function to be determined by the fit. The resulting fitting curve perfectly agrees with the experimental points. We also solved the real-axis Eliashberg equations in both s- and d-wave symmetries under the approximation [Formula: see text]. We found that the value of λ tr here determined in single-band approximation is quite compatible with T c and the gap Δ experimentally observed. Finally, we calculated the normalized tunneling conductance, whose comparison with break-junction tunnel data gives indication of the possible s-wave symmetry for the order parameter in YNi 2 B 2 C .


2000 ◽  
Vol 341-348 ◽  
pp. 1957-1958 ◽  
Author(s):  
R.S. Gonnelli ◽  
V.A. Stepanov ◽  
A. Morello ◽  
G.A. Ummarino ◽  
G. Behr ◽  
...  

1992 ◽  
Vol 193 (1-2) ◽  
pp. 171-177 ◽  
Author(s):  
A. Zibold ◽  
M. Dürrler ◽  
A. Gaymann ◽  
H.P. Geserich ◽  
N. Nücker ◽  
...  

1971 ◽  
Vol 49 (3) ◽  
pp. 374-380 ◽  
Author(s):  
K. L. Bhatia

The coupling between the lattice and the impurity bound carrier for deep monovalent acceptors in silicon, such as gallium and indium, is found to be stronger than for the shallower boron impurity. This suggests the possible existence of optical phonon-assisted transitions associated with these deep impurities. Such transitions are observed in the absorption spectrum of indium-doped silicon. The phonon-assisted transitions are superimposed on the photoionization continuum transitions of the indium acceptors. Interference effects between the phonon-assisted transition and the transition to the continuum states modify the position and line shape of the transitions. Using the phonon dispersion curves for silicon, interpretation of the results is presented. An estimate of the strength of the electron–phonon coupling in indium-doped silicon is obtained.


2016 ◽  
Vol 3 (6) ◽  
pp. 613-620 ◽  
Author(s):  
Michael Sendner ◽  
Pabitra K. Nayak ◽  
David A. Egger ◽  
Sebastian Beck ◽  
Christian Müller ◽  
...  

The measured optical phonon frequencies are used to determine the electron–phonon coupling and upper limits for charge carrier mobilities.


2021 ◽  
Vol 12 (6) ◽  
pp. 1690-1695
Author(s):  
Zhongyu Liu ◽  
Yingwei Li ◽  
Wonyong Shin ◽  
Rongchao Jin

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