Reemitted positron spectroscopy of near-surface defects

1990 ◽  
Vol 42 (4) ◽  
pp. 1910-1916 ◽  
Author(s):  
T. McMullen ◽  
M. J. Stott
Keyword(s):  
Surface Defects ◽  
Near Surface ◽  
Positron Spectroscopy

Positron spectroscopy of bulk and near-surface defects in semiconductors

1989 ◽  
Vol 67 (8) ◽  
pp. 813-817
Author(s):  
P. Hautojārvi
Keyword(s):  
Positron Annihilation ◽  
Positron Lifetime ◽  
Surface Defects ◽  
Positron Beam ◽  
Near Surface ◽  
Slow Positron ◽  
Positron Spectroscopy ◽  
Positron Lifetime Spectroscopy ◽  
Defects In Semiconductors ◽  
Ion Implanted

The use of positron annihilation to study defects in semiconductors is discussed. Positron-lifetime spectroscopy reveals As vacancies in as-grown GaAs and gives information on ionization levels. The vacancy profiles in ion-implanted Si are investigated by slow positron beam.

Electron Channelling Contrast Imaging of Dislocations

1990 ◽  
Vol 48 (1) ◽  
pp. 600-601
Author(s):  
J.T. Czernuszka ◽  
N.J. Long ◽  
P.B. Hirsch
Keyword(s):  
Field Emission ◽  
Secondary Electron ◽  
Surface Defects ◽  
Spot Size ◽  
Beam Divergence ◽  
Contrast Imaging ◽  
Scattered Electron ◽  
Near Surface ◽  
Filter System ◽  
Electron Channelling

In the 1970s there was considerable interest in the development of the electron channelling contrast imaging (ECCI) technique for imaging near surface defects in bulk (electron opaque) specimens. The predictions of the theories were realised experimentally by Morin et al., who used a field emission gun (FEG) operating at 40-50kV and an energy filter such that only electrons which had lost no more than a few 100V were detected. This paper presents the results of a set of preliminary experiments which show that an energy filter system is unneccessary to image and characterise the Burgers vectors of dislocations in bulk specimens. The examples in the paper indicatethe general versatility of the technique.A VG HB501 STEM with a FEG was operated at 100kV. A single tilt cartridge was used in the reflection position of the microscope. A retractable back-scattered electron detector was fitted into the secondary electron port and positioned to within a few millimetres of the specimen. The image was acquired using a Synoptics Synergy framestore and digital scan generator and subsequently processed using Semper 6. The beam divergence with the specimen in this position was 2.5 mrads with a spot size of approximately 4nm. Electron channelling patterns were used to orientate the sample.

Direct Plan View FIB Liftout for Near-Surface Defect Analysis in TEM

2013 ◽  
Author(s):  
Max L. Lifson ◽  
Carla M. Chapman ◽  
D. Philip Pokrinchak ◽  
Phyllis J. Campbell ◽  
Greg S. Chrisman ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Silicon Germanium ◽  
Focused Ion Beam ◽  
Surface Defects ◽  
Ion Beam ◽  
Misfit Dislocations ◽  
Tem Analysis ◽  
Plan View ◽  
Near Surface ◽  
Straightforward Method

Abstract Plan view TEM imaging is a powerful technique for failure analysis and semiconductor process characterization. Sample preparation for near-surface defects requires additional care, as the surface of the sample needs to be protected to avoid unintentionally induced damage. This paper demonstrates a straightforward method to create plan view samples in a dual beam focused ion beam (FIB) for TEM studies of near-surface defects, such as misfit dislocations in heteroepitaxial growths. Results show that misfit dislocations are easily imaged in bright-field TEM and STEM for silicon-germanium epitaxial growth. Since FIB tools are ubiquitous in semiconductor failure analysis labs today, the plan view method presented provides a quick to implement, fast, consistent, and straightforward method of generating samples for TEM analysis. While this technique has been optimized for near-surface defects, it can be used with any application requiring plan view TEM analysis.

Near-surface defects in hydrogen-plasma-treated boron-doped silicon studied by positron beam spectroscopy

1999 ◽  
Vol 68 (6) ◽  
pp. 643-645 ◽  
Author(s):  
C.E. Gonzalez ◽  
S.C. Sharma ◽  
N. Hozhabri ◽  
D.Z. Chi ◽  
S. Ashok
Keyword(s):  
Surface Defects ◽  
Hydrogen Plasma ◽  
Positron Beam ◽  
Near Surface ◽  
Boron Doped ◽  
Doped Silicon

Passive Thermography for Detection of Damaging Events during Quasi-Static Tensile Testing

2019 ◽  
Vol 809 ◽  
pp. 581-586
Author(s):  
Vitalij Popow ◽  
Martin Gurka
Keyword(s):  
Test Specimen ◽  
Surface Defects ◽  
Influencing Factor ◽  
Tensile Tests ◽  
Fiber Reinforced Polymers ◽  
Failure Behavior ◽  
Fiber Reinforced ◽  
Near Surface ◽  
Fiber Reinforced Materials ◽  
Static Tensile

In order to determine the material properties of anisotropic continuous fiber-reinforced polymers, such as stiffness and strength, quasi-static tensile tests are carried out, in which the test specimen is subjected to a controlled load until failure. In opposite to ductile metals, exact localization of the failure on the test specimen or observation of the initial or final failure in time is not possible because of the brittle failure mechanism. The sample often breaks down into many small fragments. In order to get a deeper understanding of the failure behavior and to optimize the material and the design of the specimen, a characterization of the damage progress under load by passive thermography was implemented. This is a suitable method for the detection of near-surface defects and provides very promising results, especially in combination with sophisticated evaluation methods of active thermography. An important influencing factor is the analysis of the amount of energy released during a micro-damaging event. In this paper, we show an approach to increase the contrast of single damaging events and a possibility to visualize the damaging progress, especially for near-surface defects. The measurements were realized with continuously fiber-reinforced materials.

Comparison of Lamb waves and pulse echo in detection of near-surface defects in laminate plates

1995 ◽  
Vol 28 (4) ◽  
pp. 215-223 ◽  
Author(s):  
K.S. Tan ◽  
N. Guo ◽  
B.S. Wong ◽  
C.G. Tui
Keyword(s):  
Surface Defects ◽  
Lamb Waves ◽  
Near Surface ◽  
Pulse Echo

Nondestructive Testing of Surface Breaking Defects and Near Surface Defects

CIRP Annals ◽  
1985 ◽  
Vol 34 (1) ◽  
pp. 495-497 ◽  
Author(s):  
G. Dobmann ◽  
R. Becker ◽  
H.J. Salzburger ◽  
W. Arnold ◽  
E. Waschkies ◽  
...  
Keyword(s):  
Nondestructive Testing ◽  
Surface Defects ◽  
Near Surface

Near-Surface Defects in Boron-Doped Diamond Schottky Diodes Studied From Capacitance Transients

2008 ◽  
Vol 1 ◽  
pp. 035003 ◽  
Author(s):  
Pierre Muret ◽  
Julien Pernot ◽  
Tokuyuki Teraji ◽  
Toshimichi Ito
Keyword(s):  
Surface Defects ◽  
Schottky Diodes ◽  
Boron Doped Diamond ◽  
Near Surface ◽  
Boron Doped
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