Radiative recombination center inAs2Se3as studied by optically detected magnetic resonance

1990 ◽  
Vol 42 (18) ◽  
pp. 11845-11856 ◽  
Author(s):  
J. Ristein ◽  
P. C. Taylor ◽  
W. D. Ohlsen ◽  
G. Weiser
Keyword(s):  
Magnetic Resonance ◽  
Radiative Recombination ◽  
Recombination Center ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Optically Detected Magnetic Resonance of Sulfur Doped Gallium Phosphide

1989 ◽  
Vol 163 ◽  
Author(s):  
K. L. Brower
Keyword(s):  
Magnetic Resonance ◽  
Valence Band ◽  
Radiative Recombination ◽  
Gallium Phosphide ◽  
Free Electrons ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected ◽  
Lorentzian Lineshape

AbstractAn isotropic optically detected magnetic resonance (ODMR) having a Lorentzian lineshape at g - 2.050 ± 0.003 and linewidth (FWHM) of 67.3 mT is observed in GaP doped with 6 - 9 × 1017 S/cm3. The ODMR at g - 2.050 is believed to arise from free electrons (or holes) in the conduction (valence) band. This ODMR is completely quenched due to non-radiative recombination in the vicinity of g - 1.99.

Characterization of radiative recombination in amorphous silicon by optically detected magnetic resonance: Part I

1982 ◽  
Vol 46 (5) ◽  
pp. 473-500 ◽  
Author(s):  
S. Depinna ◽  
B. C. Cavenett ◽  
I. G. Austin ◽  
T. M. Searle ◽  
M. J. Thompson ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Amorphous Silicon ◽  
Radiative Recombination ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Optically Detected Magnetic Resonance Studies of Complex Antisite-Related Defects in Bulk Lec GaP

1987 ◽  
Vol 104 ◽  
Author(s):  
W. M. Chen ◽  
M. Godlewski ◽  
B. Monemar ◽  
H. P. Gislason
Keyword(s):  
Electronic Structure ◽  
Magnetic Resonance ◽  
Radiative Recombination ◽  
Magnetic Resonance Studies ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected ◽  
Cation Sites ◽  
Related Complex

ABSTRACTA range of PGa antisite-related complex defects in LEC GaP:Cu, Li was observed with optically detected magnetic resonance. These isoelectronic defects are formed by a compensation of the PGa double donor by the CUGadouble acceptor on adjacent cation sites. T electronic structure of these defects is discussed, as well as their role in non-radiative recombination.

An Optically Detected Magnetic Resonance Study of Recombination Mechanisms in Polythiophene

1987 ◽  
Vol 109 ◽  
Author(s):  
B. C. Hess ◽  
J. Shinar ◽  
Z. Vardeny ◽  
E. Ehrenfreund ◽  
F. Wudl
Keyword(s):  
Magnetic Resonance ◽  
Radiative Recombination ◽  
Magnetic Resonance Study ◽  
Photoluminescence Band ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

ABSTRACTFrom detailed optically detected magnetic resonance measurements in polythiophene, we show that the g=2.003 signal is luminescence enhancing, and that the signal comes from a broad photoluminescence band peaking near 1.65 eV. This band is tentatively assigned to Phe radiative recombination of polarons, with lifetimes between 10-8 and 5×10-5sec.

Optically Detected Magnetic Resonance Studies of Non-Radiative Recombination Centres in 6H SiC

1998 ◽  
Vol 264-268 ◽  
pp. 599-602 ◽  
Author(s):  
Nguyen Tien Son ◽  
Matthias Wagner ◽  
E. Sörman ◽  
W.M. Chen ◽  
Bo Monemar ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Radiative Recombination ◽  
Magnetic Resonance Studies ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Optically Detected Magnetic Resonance and Double Beam Photoluminescence of CdS/HgS/CdS Nanoparticles

1998 ◽  
Vol 536 ◽  
Author(s):  
H. Porteanu ◽  
A. Glozman ◽  
E. Lifshitz ◽  
A. Eychmüller ◽  
H. Weller
Keyword(s):  
Optical Properties ◽  
Magnetic Resonance ◽  
Cds Nanoparticles ◽  
Electron Hole ◽  
Cladding Layer ◽  
Double Beam ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected ◽  
Cladding Layers ◽  
Hole Recombination

AbstractCdS/HgS/CdS nanoparticles consist of a CdS core, epitaxially covered by one or two monolayers of HgS and additional cladding layers of CdS. The present paper describes our efforts to identify the influence of CdS/HgS/CdS interfaces on the localization of the photogenerated carriers deduced from the magneto-optical properties of the materials. These were investigated by the utilization of optically detected magnetic resonance (ODMR) and double-beam photoluminescence spectroscopy. A photoluminescence (PL) spectrum of the studied material, consists of a dominant exciton located at the HgS layer, and additional non-excitonic band, presumably corresponding to the recombination of trapped carriers at the interface. The latter band can be attenuated using an additional red excitation. The ODMR measurements show the existence of two kinds of electron-hole recombination. These electron-hole pairs maybe trapped either at a twin packing of a CdS/HgS interface, or at an edge dislocation of an epitaxial HgS or a CdS cladding layer.

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