Electronic-structure study of the (110) inversion domain boundary in SiC

1990 ◽  
Vol 41 (5) ◽  
pp. 2948-2958 ◽  
Author(s):  
Walter R. L. Lambrecht ◽  
Benjamin Segall
1990 ◽  
Vol 42 (2) ◽  
pp. 1462-1462 ◽  
Author(s):  
Walter R. L. Lambrecht ◽  
Benjamin Segall

2018 ◽  
Vol 10 (43) ◽  
pp. 37651-37660 ◽  
Author(s):  
Siqian Li ◽  
Huaping Lei ◽  
Yi Wang ◽  
Md Barkat Ullah ◽  
Jun Chen ◽  
...  

2021 ◽  
Author(s):  
Stephen Sproules

The electronic structures of homovalent [V2(μ-S2)2(R2dtc)4] (R = Et, iBu) and mixed-valent [V2(μ-S2)2(R2dtc)4]+ are reported here. The soft-donor, eight-coordinate ligand shell combined with the fully delocalised ground state provides a...


1993 ◽  
Vol 5 (7) ◽  
pp. 891-898 ◽  
Author(s):  
Lu Wenchang ◽  
Zhang Kaiming ◽  
Xie Xide

2020 ◽  
Vol 124 (16) ◽  
pp. 8786-8794
Author(s):  
S. Marutheeswaran ◽  
Shashi B. Mishra ◽  
Somnath C. Roy ◽  
B. R. K. Nanda

1999 ◽  
Vol 59 (3) ◽  
pp. 1571-1574 ◽  
Author(s):  
Chenxi Li ◽  
Kunquan Lu ◽  
Yuren Wang ◽  
Kozaburo Tamura ◽  
Shinya Hosokawa ◽  
...  

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