Electronic structure study of liquid germanium based on x-ray-absorption near-edge structure spectroscopy

1999 ◽  
Vol 59 (3) ◽  
pp. 1571-1574 ◽  
Author(s):  
Chenxi Li ◽  
Kunquan Lu ◽  
Yuren Wang ◽  
Kozaburo Tamura ◽  
Shinya Hosokawa ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Structure Study ◽  
Edge Structure ◽  
X Ray ◽  
X Ray Absorption

Manganese K- and L3-Edge X-Ray Absorption Fine Structure Study of Zn1-xMnxTe

2013 ◽  
Vol 634-638 ◽  
pp. 2489-2492 ◽  
Author(s):  
Wei Zheng ◽  
Ling Yun Jang ◽  
Jenn Min Lee ◽  
Rui Sheng Zheng ◽  
Chee Wee Liu ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Fine Structure ◽  
Structure Study ◽  
Chemical Bonds ◽  
Bulk Materials ◽  
Absorption Data ◽  
Edge Structure ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption

High-resolution synchrotron radiation x-ray absorption data on Mn K- and L3-edge for semimagnetic semiconductor Zn1-xMnxTe bulk materials are presented. A detailed analysis of the extended x-ray absorption fine structure by using the IFEFFIT program, and the chemical bonds of Mn-Te are obtained. The x-ray absorption near-edge structure of the Mn K- and L3-edges are investigated, and the electronic structure of Zn1-xMnxTe with various compositions are studied.

Electronic structure of TiO2 nanotube arrays from X-ray absorption near edge structure studies

2009 ◽  
Vol 19 (37) ◽  
pp. 6804 ◽  
Author(s):  
J. G. Zhou ◽  
H. T. Fang ◽  
J. M. Maley ◽  
M. W. Murphy ◽  
J. Y. Peter Ko ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Tio2 Nanotube Arrays ◽  
Tio2 Nanotube ◽  
Nanotube Arrays ◽  
Edge Structure ◽  
X Ray ◽  
X Ray Absorption

Fluorescence Extended X-Ray Absorption Fine Structure Study on Local Structures of Rare-Earth-Doped InGaGdN

2016 ◽  
Vol 1133 ◽  
pp. 429-433
Author(s):  
Siti Nooraya Mohd Tawil ◽  
Shuichi Emura ◽  
Daivasigamani Krishnamurthy ◽  
Hajime Asahi
Keyword(s):  
Fine Structure ◽  
Rare Earth ◽  
Nearest Neighbor ◽  
Structure Study ◽  
Edge Structure ◽  
X Ray ◽  
Local Structures ◽  
Absorption Fine ◽  
X Ray Absorption

Local structures around gadolinium atoms in rare-earth (RE)-doped InGaGdN thin films were studied by means of fluorescence extended X-ray absorption fine structure (EXAFS) measured at the Gd LIII-edges. The samples were doped with Gd in-situ during growth by plasma-assisted molecular beam epitaxy (PAMBE). Gd LIII-edge EXAFS signal from the GaGdN, GdN and Gd foil were also measured as reference. The X-ray absorption near edge structure (XANES) spectra around Gd LIII absorption edge of InGaGdN samples observed at room temperature indicated the enhancement of intensities with the increase of Gd composition. Further EXAFS analysis inferred that the Gd atoms in InGaN were surrounded by similar atomic shells as in the case of GaGdN with the evidence indicating majority of Gd atoms substituted into Ga sites of InGaGdN. A slight elongation of bond length for the 2nd nearest-neighbor (Gd–Ga) of sample with higher Gd concentration was also observed.

X-ray absorption near edge structure study of the electro-oxidation reaction of CO on Pt50Ru50 nanoparticles

1995 ◽  
Vol 398 (1-2) ◽  
pp. 43-47 ◽  
Author(s):  
D. Aberdam ◽  
R. Durand ◽  
R. Faure ◽  
F. Gloaguen ◽  
J.L. Hazemann ◽  
...  
Keyword(s):  
Oxidation Reaction ◽  
Structure Study ◽  
Edge Structure ◽  
X Ray ◽  
Electro Oxidation ◽  
X Ray Absorption

Local electronic structure of ZnS and ZnSe doped by Mn, Fe, Co, and Ni from x-ray-absorption near-edge structure studies

1996 ◽  
Vol 53 (3) ◽  
pp. 1119-1128 ◽  
Author(s):  
K. L/awniczak-Jabl/onska ◽  
R. J. Iwanowski ◽  
Z. Gol/acki ◽  
A. Traverse ◽  
S. Pizzini ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Edge Structure ◽  
X Ray ◽  
Local Electronic Structure ◽  
X Ray Absorption

Electronic Structure of P-Doped ZnO Films with p-Type Conductivity

2006 ◽  
Vol 6 (11) ◽  
pp. 3422-3425
Author(s):  
Veeramuthu Vaithianathan ◽  
Jong Ha Moon ◽  
Chang-Hwan Chang ◽  
Kandasami Asokan ◽  
Sang Sub Kim
Keyword(s):  
Electronic Structure ◽  
Xanes Spectrum ◽  
Sharp Decrease ◽  
Zno Films ◽  
Charge Neutrality ◽  
Edge Structure ◽  
X Ray ◽  
Doped Zno ◽  
P Type ◽  
X Ray Absorption

The electronic structure of laser-deposited P-doped ZnO films was investigated by X-ray absorption near-edge structure spectroscopy (XANES) at the O K-, Zn K-, and Zn L3-edges. While the O K-edge XANES spectrum of the n-type P-doped ZnO demonstrates that the density of unoccupied states, primarily O 2p–P 3sp hybridized states, is significantly high, the O K-edge XANES spectrum of the p-type P-doped ZnO shows a sharp decrease in intensity of the corresponding feature indicating that P replaces O sites in the ZnO lattice, and thereby generating PO. This produces holes to maintain charge neutrality that are responsible for the p-type behavior of P-doped ZnO. Both the Zn K-, and Zn L3-edge XANES spectra of the P-doped ZnO reveal that Zn plays no significant role in the p-type behavior of ZnO:P.

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