Temperature dependence of the exciton population in emission spectra of GaAs single quantum wells with enlarged monolayer-flat growth islands

1989 ◽  
Vol 40 (14) ◽  
pp. 9698-9702 ◽  
Author(s):  
K. Fujiwara ◽  
K. Kanamoto ◽  
N. Tsukada
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Emission Spectra ◽  
Single Quantum

Temperature dependence of exciton lifetimes in GaAs/AlxGa1−xAs single quantum wells

1993 ◽  
Vol 47 (16) ◽  
pp. 10456-10460 ◽  
Author(s):  
J. Martinez-Pastor ◽  
A. Vinattieri ◽  
L. Carraresi ◽  
M. Colocci ◽  
Ph. Roussignol ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Single Quantum

Cross-plane thermal conductivity temperature dependence for PbSnSe/PbSe thin film superlattice material from 100K to 300K

2013 ◽  
Vol 1456 ◽  
Author(s):  
James D. Jeffers ◽  
Leonard Olona ◽  
Zhihua Cai ◽  
Khosrow Namjou ◽  
Patrick J. McCann
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Quantum Wells ◽  
Temperature Dependence ◽  
Lattice Thermal Conductivity ◽  
Continuous Wave ◽  
Emission Spectra ◽  
Multiple Quantum ◽  
Element Analysis ◽  
Plane Lattice

ABSTRACTThe temperature dependence of cross-plane lattice thermal conductivity for thin film IV-VI semiconductors grown by molecular beam epitaxy was measured. Samples consisting of PbSe/PbSrSe multiple quantum wells (MQWs) on PbSe/PbSnSe superlattices (SLs) were grown with variations in SL layer thickness and the number of SL pairs. Localized lattice temperatures within the MQW layers were extracted from analysis of continuous wave photoluminescence (PL) emission spectra at heat sink temperatures between 100 K and 250 K. These data, finite element analysis, and electrical characterization were used to determine cross-plane lattice thermal conductivity of two different SL materials. A SL material with three different PbSe/PbSnSe thicknesses (1.2/1.2, 1.8/1.8, and 2.4/2.4 nm) exhibited a fairly constant lattice thermal conductivity from 1.2 to 1.3 W/mK as the sample was cooled from 250 K to 100 K. Another SL material with five different PbSe/PbSnSe thicknesses (0.5/0.5, 1.0/1.0, 1.6/1.6, 2.1/2.1, and 2.6/2.6 nm) exhibited very low lattice thermal conductivities from 0.46 to 0.47 W/mK 250 K to 100 K. These results are consistent with reflection of low energy heat transporting acoustic phonons within the SL material.

Temperature dependence of the photoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells

1993 ◽  
Vol 63 (1-4) ◽  
pp. 172-176 ◽  
Author(s):  
Y. Baltagi ◽  
S. Monéger ◽  
A. Tabata ◽  
T. Benyattou ◽  
C. Bru ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Single Quantum ◽  
Lattice Matched

Annealing effects on the temperature dependence of photoluminescence characteristics of GaAsSbN single-quantum wells

2005 ◽  
Vol 98 (1) ◽  
pp. 013703 ◽  
Author(s):  
J. Li ◽  
S. Iyer ◽  
S. Bharatan ◽  
L. Wu ◽  
K. Nunna ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Single Quantum ◽  
Annealing Effects
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