Temperature dependence of localized and free exciton lifetime in CdZnSSe/ZnSSe single quantum wells

1998 ◽  
Vol 24 (1) ◽  
pp. 41-47 ◽  
Author(s):  
H. Wang ◽  
K.S. Wong ◽  
G.K.L. Wong ◽  
K.K. Law
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Free Exciton ◽  
Single Quantum ◽  
Exciton Lifetime

Temperature dependence of exciton lifetimes in GaAs/AlxGa1−xAs single quantum wells

1993 ◽  
Vol 47 (16) ◽  
pp. 10456-10460 ◽  
Author(s):  
J. Martinez-Pastor ◽  
A. Vinattieri ◽  
L. Carraresi ◽  
M. Colocci ◽  
Ph. Roussignol ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Single Quantum

Temperature dependence of the photoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells

1993 ◽  
Vol 63 (1-4) ◽  
pp. 172-176 ◽  
Author(s):  
Y. Baltagi ◽  
S. Monéger ◽  
A. Tabata ◽  
T. Benyattou ◽  
C. Bru ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Single Quantum ◽  
Lattice Matched

Annealing effects on the temperature dependence of photoluminescence characteristics of GaAsSbN single-quantum wells

2005 ◽  
Vol 98 (1) ◽  
pp. 013703 ◽  
Author(s):  
J. Li ◽  
S. Iyer ◽  
S. Bharatan ◽  
L. Wu ◽  
K. Nunna ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Single Quantum ◽  
Annealing Effects

Rapid Thermal Annealing of GaAs/AlGaAs Coupled Double Quantum Wells

1988 ◽  
Vol 144 ◽  
Author(s):  
Emil S. Koteles ◽  
B. Elman ◽  
C. A. Armiento ◽  
P. Melman ◽  
J. Y. Chi ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Quantum Wells ◽  
Thermal Annealing ◽  
Excitation Spectrum ◽  
Rapid Thermal Annealing ◽  
Double Quantum ◽  
Single Quantum ◽  
Exciton Lifetime

ABSTRACTThe effect of rapid thermal annealing (RTA) on the shapes of silicon dioxide capped symmetric coupled double GaAs/AlGaAs quantum wells (CDQW) has been investigated. In contrast to previous results on single quantum wells in which increases in exciton energies were observed after RTA, large decreases in exciton energies were seen in CDQWs. Furthermore, there was clear evidence, in the excitation spectrum and in increases in the lowest energy exciton lifetime, of asymmetry present in the heterostructure after RTA.

Decay Measurements of Free and Bound Exciton Recombination in Doped GaAs/GaAIAs Quantum Wells

1989 ◽  
Vol 163 ◽  
Author(s):  
J.P. Bergman ◽  
P.O. Holtz ◽  
B. Monemar ◽  
M. Sundaram ◽  
J.L Merz ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Temperature Dependence ◽  
Decay Time ◽  
Free Exciton ◽  
Temperature Decay ◽  
Photoluminescence Decay ◽  
Decay Times ◽  
Exciton Recombination

AbstractIn this study we present photoluminescence decay measurements of free exciton (FE) and bound exciton (BE) recombination in doped GaAs/AIGaAs quantum wells (QW). It is found that the FE decay time is reduced in the doped QW’s compared to similar undoped samples. The low temperature decay time of the BE is slightly longer than for the FE, with BE decay times from 300 to 600 ps for well widths of 50 to 150 Å, respectively. It is also found that the observed decay of the BE is strongly influenced by the decay time of the FE. This is especially observed in the similarity of the temperature dependence for the FE and BE decay time.

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