Dimer strings, anisotropic growth, and persistent layer-by-layer epitaxy

1989 ◽  
Vol 40 (17) ◽  
pp. 11951-11954 ◽  
Author(s):  
J. Y. Tsao ◽  
E. Chason ◽  
U. Koehler ◽  
R. Hamers
Keyword(s):  
Layer By Layer ◽  
Anisotropic Growth ◽  
Persistent Layer

Anisotropic growth and “layer-by-layer” epitaxy

1989 ◽  
Vol 219 (3) ◽  
pp. L551-L559
Author(s):  
Y.-W. Mo ◽  
R. Kariotis ◽  
D.E. Savage ◽  
M.G. Lagally
Keyword(s):  
Layer By Layer ◽  
Anisotropic Growth

Persistent layer-by-layer sputtering of Au(111)

2000 ◽  
Vol 88 (1) ◽  
pp. 597-599 ◽  
Author(s):  
M. V. Ramana Murty ◽  
A. J. Couture ◽  
B. H. Cooper ◽  
A. R. Woll ◽  
J. D. Brock ◽  
...  
Keyword(s):  
Layer By Layer ◽  
Persistent Layer

Morphological Transition of Epitaxial Rhodium (111)

1995 ◽  
Vol 399 ◽  
Author(s):  
Frank Tsui ◽  
Joanne Wellman ◽  
Ctirad Uher ◽  
Roy Clarke
Keyword(s):  
Surface Roughness ◽  
Film Thickness ◽  
Nucleation And Growth ◽  
Layer Growth ◽  
Morphological Transition ◽  
Layer By Layer ◽  
Surface Features ◽  
General Pathway ◽  
Nucleation Size ◽  
Persistent Layer

ABSTRACTWe report a global morphological transition in the nucleation and growth of epitaxial Rh (111). The transition occurs near 600 K, about 1/4 of the Rh melting temperature, and is signaled by a change in the shape of the surface features from fingered to compact. The transition appears to be related to a change in the critical nucleation size from 1 to 2 atoms. On both sides of the transition, there lies a regime of persistent layer-by-layer growth indicated by a minimum in surface roughness and by the presence of RHEED oscillations. The general surface features exhibit well defined length scales that are not self-affine, and as growth proceeds they increase in size following a power-law dependence on film thickness with a temperature-independent exponent of 0.33 ± 0.03. The results suggest a general pathway to the layer-by-layer growth of close-packed metals.

Nanosurface-Confined Anisotropic Growth and Magnetism of Ellipsoidal α-Fe Nanogranules

2008 ◽  
Vol 8 (4) ◽  
pp. 1959-1964
Author(s):  
Seung Hun Huh ◽  
Chang Yeoul Kim ◽  
Doh Hyung Riu ◽  
Yosuke Taguchi ◽  
Atsushi Nakajima
Keyword(s):  
Growth Direction ◽  
Nucleation Site ◽  
Layer Growth ◽  
Layer By Layer ◽  
Anisotropic Growth ◽  
Anodized Aluminum ◽  
Anodized Aluminum Oxide ◽  
Magnetic Dipoles ◽  
Demagnetizing Field ◽  
Film Layer

We have investigated the nanosurface-confined anisotropic growth of ordered-ellipsoidal Fe nanogranules when an Fe plume was deposited at a slanting angle onto an anodized aluminum oxide (AAO) film. Layer-by-layer growth was also investigated. This growth is driven by two critical factors: (1) a new rhombic AAO cell and (2) the slanting deposition of the Fe plume. During slanting deposition, the rhombic AAO cell induces strong restrictions in the nucleation site, growth direction, and granular size; therefore, the degree of freedom during growth is restricted. The magnetic dipoles of the ordered Fe nanogranules are placed along the long axis of the ellipsoid at an angle of 180° (antiparallel) due to the demagnetizing field, shape anisotropy, and magnetic dipole-to-dipole interactions.

Anisotropic growth and “layer-by-layer” epitaxy

1989 ◽  
Vol 219 (3) ◽  
pp. L551-L559 ◽  
Author(s):  
Y.-W. Mo ◽  
R. Kariotis ◽  
D.E. Savage ◽  
M.G. Lagally
Keyword(s):  
Layer By Layer ◽  
Anisotropic Growth

Persistent layer-by-layer growth for pulsed-laser homoepitaxy of $(000\bar 1)$ ZnO

2012 ◽  
Vol 6 (11) ◽  
pp. 433-435 ◽  
Author(s):  
Jan Zippel ◽  
Michael Lorenz ◽  
Gabriele Benndorf ◽  
Marius Grundmann
Keyword(s):  
Pulsed Laser ◽  
Layer Growth ◽  
Layer By Layer ◽  
Persistent Layer

Microstructural characterization of CoPtCr/Cr thin film disks by cross-section TEM and elongated probe micro-diffraction

1991 ◽  
Vol 49 ◽  
pp. 762-763
Author(s):  
M.A. Parker ◽  
K.E. Johnson ◽  
C. Hwang ◽  
A. Bermea
Keyword(s):  
Magnetic Recording ◽  
Electron Probe ◽  
Microstructural Characterization ◽  
Crystallographic Structure ◽  
Recording Media ◽  
Layer By Layer ◽  
Cross Sectional ◽  
New Techniques ◽  
Polished Side

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.

Epitaxial growth manner and structure of superconducting oxide films

1990 ◽  
Vol 48 (4) ◽  
pp. 2-3
Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Film Surface ◽  
High Energy ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Initial Growth ◽  
In Situ Growth ◽  
High Quality ◽  
Activated Reactive Evaporation

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

Compact back-scattered electrons' energy analyzer for standard SEM

1994 ◽  
Vol 52 ◽  
pp. 488-489
Author(s):  
S. Likharev ◽  
A. Kramarenko ◽  
V. Vybornov
Keyword(s):  
Depth Resolution ◽  
High Energy ◽  
Primary Beam ◽  
Layer By Layer ◽  
Energy Analyzer ◽  
High Energy Part ◽  
Small Window ◽  
Energy Part ◽  
Wide Range ◽  
High Voltage Supply

At present time the interest is growing considerably for theoretical and experimental analysis of back-scattered electrons (BSE) energy spectra. It was discovered that a special angle and energy nitration of BSE flow could be used for increasing a spatial resolution of BSE mode, sample topography investigations and for layer-by layer visualizing of a depth structure. In the last case it was shown theoretically that in order to obtain suitable depth resolution it is necessary to select a part of BSE flow with the directions of velocities close to inverse to the primary beam and energies within a small window in the high-energy part of the whole spectrum.A wide range of such devices has been developed earlier, but all of them have considerable demerit: they can hardly be used with a standard SEM due to the necessity of sufficient SEM modifications like installation of large accessories in or out SEM chamber, mounting of specialized detector systems, input wires for high voltage supply, screening a primary beam from additional electromagnetic field, etc. In this report we present a new scheme of a compact BSE energy analyzer that is free of imperfections mentioned above.

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