Effect of alloy disorder on the deep levels produced by the anion vacancy inGaAs1−xPx

1989 ◽  
Vol 40 (17) ◽  
pp. 11947-11950 ◽  
Author(s):  
Sui-An Tang ◽  
Charles W. Myles ◽  
William C. Ford
Keyword(s):  
Anion Vacancy ◽  
Deep Levels ◽  
Alloy Disorder

Effect of alloy disorder on deep levels in Hg1−xCdxTe

1986 ◽  
Vol 4 (4) ◽  
pp. 2195-2199 ◽  
Author(s):  
Charles W. Myles ◽  
William C. Ford
Keyword(s):  
Deep Levels ◽  
Alloy Disorder

EXPERIMENTAL VERIFICATION OF DLTS MODELS

2019 ◽  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Data Processing ◽  
Experimental Verification ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

DEEP LEVELS' ACTIVATION ENERGY DEPENDENCE ON MEASUREMENT MODES

2019 ◽  
Author(s):  
Aleksey Bogachev ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Energy Dependence ◽  
Deep Level ◽  
Deep Levels ◽  
Blocking Voltage

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.

InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels

2021 ◽  
Vol 238 ◽  
pp. 111514
Author(s):  
Sergii Golovynskyi ◽  
Oleksandr I. Datsenko ◽  
Luca Seravalli ◽  
Giovanna Trevisi ◽  
Paola Frigeri ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Light Emission ◽  
Deep Levels ◽  
Photoelectric Properties

scholarly journals Double sulfur vacancies by lithium tuning enhance CO2 electroreduction to n-propanol

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Chen Peng ◽  
Gan Luo ◽  
Junbo Zhang ◽  
Menghuan Chen ◽  
Zhiqiang Wang ◽  
...  
Keyword(s):  
Anion Vacancy ◽  
High Energy ◽  
Hydrogen Electrode ◽  
Cycle Number ◽  
Faradaic Efficiency ◽  
Flow Cells ◽  
Forming Mechanism ◽  
Co2 Electroreduction ◽  
Tuning Strategy ◽  
Partial Current

AbstractElectrochemical CO2 reduction can produce valuable products with high energy densities but the process is plagued by poor selectivities and low yields. Propanol represents a challenging product to obtain due to the complicated C3 forming mechanism that requires both stabilization of *C2 intermediates and subsequent C1–C2 coupling. Herein, density function theory calculations revealed that double sulfur vacancies formed on hexagonal copper sulfide can feature as efficient electrocatalytic centers for stabilizing both CO* and OCCO* dimer, and further CO–OCCO coupling to form C3 species, which cannot be realized on CuS with single or no sulfur vacancies. The double sulfur vacancies were then experimentally synthesized by an electrochemical lithium tuning strategy, during which the density of sulfur vacancies was well-tuned by the charge/discharge cycle number. The double sulfur vacancy-rich CuS catalyst exhibited a Faradaic efficiency toward n-propanol of 15.4 ± 1% at −1.05 V versus reversible hydrogen electrode in H-cells, and a high partial current density of 9.9 mA cm−2 at −0.85 V in flow-cells, comparable to the best reported electrochemical CO2 reduction toward n-propanol. Our work suggests an attractive approach to create anion vacancy pairs as catalytic centers for multi-carbon-products.

Association of divalent anion impurity-anion vacancy pairs in KCI

1973 ◽  
Vol 23 (3) ◽  
pp. 318-319 ◽  
Author(s):  
P.K. Swaminathan ◽  
A.K. Shukla ◽  
C.N.R. Rao
Keyword(s):  
Anion Vacancy ◽  
Anion Impurity ◽  
Impurity Anion

Self-compensation and deep levels in Pb1−xSnxS1−ySey crystals

1992 ◽  
Vol 14 (4) ◽  
pp. 398-400 ◽  
Author(s):  
D.M. Zayachuk ◽  
V.I. Garasim ◽  
V.A. Shenderovskii
Keyword(s):  
Deep Levels
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