Critical current, pinning, and the resistive state of superconducting single-crystal niobium with various types of defect structure

2005 ◽  
Vol 31 (7) ◽  
pp. 564-568 ◽  
Author(s):  
V. I. Sokolenko ◽  
Ya. D. Starodubov
2021 ◽  
Vol 21 (9) ◽  
pp. 4941-4943
Author(s):  
Sang Heon Lee

In the present study, a YBa2Cu3O7−y bulk superconductor added with 5~10 wt% Ag was fabricated employing Sm123 as a seed to produce a superconductive single crystal. Metallic silver was added to the single crystal of YBa2Cu3O7−y to remove defects such as cracks and pores. Electromagnetic properties of the bulk superconductor at 77 K were analyzed based on relationships of magnetic levitation, trapped magnetic force, and critical current density. The critical current density of the superconductor at 77 K and 0 T was 3.53 × 104 A/cm2. Discontinuous points in the distribution of magnetic field lines were not observed, implying that these two specimens grew well as a single crystal without specific weak links. For the growth of a superconductive nano crystal employing slow cooling at temperature of formation of 123 phase, superconductive nano crystals were aligned in a-b direction, the direction of peak current flow. The peak value of the trapped magnetic force of the YBa2Cu3O7−y superconductor specimen was 3.23 kG. Using the FC method, peak forces of attraction and repulsion were 21.696 N and 70.168 N, respectively.


2015 ◽  
Vol 92 (14) ◽  
Author(s):  
Yue Sun ◽  
Sunseng Pyon ◽  
Tsuyoshi Tamegai ◽  
Ryo Kobayashi ◽  
Tatsuya Watashige ◽  
...  

1971 ◽  
Vol 4 (8) ◽  
pp. 2701-2724 ◽  
Author(s):  
Elward T. Rodine ◽  
Peter L. Land

2008 ◽  
Vol 92 (16) ◽  
pp. 161902 ◽  
Author(s):  
P.-C. Tsai ◽  
M.-L. Sun ◽  
C.-T. Chia ◽  
H.-F. Lu ◽  
S.-H. Lin ◽  
...  

Cryogenics ◽  
1994 ◽  
Vol 34 (11) ◽  
pp. 941-945 ◽  
Author(s):  
A. Wahl ◽  
V. Hardy ◽  
A. Maignan ◽  
C. Martin ◽  
B. Raveau

2003 ◽  
Vol 82 (25) ◽  
pp. 4519-4521 ◽  
Author(s):  
S. R. Foltyn ◽  
P. N. Arendt ◽  
Q. X. Jia ◽  
H. Wang ◽  
J. L. MacManus-Driscoll ◽  
...  

1984 ◽  
Vol 37 ◽  
Author(s):  
A. F. Marshall ◽  
F. Hellman ◽  
B. Oh

AbstractFilms of Nb3Sn vapor deposited at low rates and high temperatures on (1102) sapphire form an epitaxial <100> single crystal matrix with a domain structure of misoriented regions bounded by low-angle dislocation boundaries. Nucleation of other orientations at the interface result in a highly oriented but polycrystalline film through approximately the first thousand Angstroms of film thickness. After this point random orientations become overgrown by epitaxial <100> regions. At slightly lower temperatures many small <100> grains with a second epitaxial relationship also nucleate at the interface. These rotated grains persist through greater thicknesses than random orientations. The misorientation defect structure of the single crystal matrix is analyzed by transmission electron microscopy.


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