Balance-equation analysis of hot-carrier transport in a type-II semiconductor superlattice

1988 ◽  
Vol 38 (12) ◽  
pp. 8230-8240 ◽  
Author(s):  
X. L. Lei ◽  
H. L. Cui ◽  
N. J. M. Horing
Keyword(s):  
Balance Equation ◽  
Carrier Transport ◽  
Type Ii ◽  
Hot Carrier ◽  
Semiconductor Superlattice ◽  
Equation Analysis

Coupled-Langevin-equation analysis of hot-carrier transport in semiconductors

1992 ◽  
Vol 45 (4) ◽  
pp. 1903-1906 ◽  
Author(s):  
Tilmann Kuhn ◽  
Lino Reggiani ◽  
Luca Varani
Keyword(s):  
Langevin Equation ◽  
Carrier Transport ◽  
Hot Carrier ◽  
Equation Analysis

Balance-Equation Approach to Hot-Carrier Transport in Semiconductors

1992 ◽  
Vol 06 (07) ◽  
pp. 805-936 ◽  
Author(s):  
X.L. Lei ◽  
N.J.M. Horing
Keyword(s):  
Steady State ◽  
Balance Equation ◽  
Carrier Transport ◽  
Thermal Noise ◽  
Transport Theory ◽  
Equation Approach ◽  
Balance Equations ◽  
Hot Carrier ◽  
Linear And Nonlinear ◽  
And Diffusion

The balance-equation approach to nonlinear hot-carrier transport theory, formulated by Lei and Ting (1984), is addressed in this comprehensive review. A central feature is the role of strong electron-electron interactions in promoting rapid thermalization about the drifted transport state and the concomitant substantial simplification of the transport theory. This physical feature is embodied in the initial density matrix chosen to represent the unperturbed carrier system. Force and energy balance equations are formulated for the dc steady state, ac dynamic and transient cases of charge conduction, including memory effects. The scattering mechanisms include impurity and phonon interactions along with dynamic nonlocal screening effects due to carrier-carrier interactions. Both linear and nonlinear resistivities are discussed in the degenerate and nondegenerate statistical regimes. Interesting phenomena such as electron cooling and thermal noise and diffusion are discussed as well. Semiconductor microstructure transport is described for both linear and nonlinear hot carrier conduction. In this connection, quasi-2D-systems, heterojunctions, and quantum well superlattices are treated with attention to steady state, transient and high frequency transport, including, for example, superlattice plasmon resonance structure. Type-II superlattice transport is reviewed as well as type-I, and electron-hole drag is treated in conjunction with negative minority electron mobility in a quantum well. Multivalley semiconductors are discussed in some detail. Furthermore, attention is also focused on the center-of-mass velocity fluctuation, Langevin-type equation and thermal noise and diffusion for microstructures and multivalley systems. A number of particularly important phenomena are examined from the balance-equation point of view, such as nonequilibrium phonons, higher order scattering effects and weak localization, hydrodynamic equations for weakly nonuniform systems, and the intracollisional field effect. Alternative formulations and interpretations of the balance-equation approach are reviewed. The distinction between this many-particle, isothermal, balance-equation theory and the noninteracting (single-particle) adiabatic transport theory is discussed to clarify issues subject to controversy in the literature. Finally, we give a brief review of recent developments in the balance-equation approach: investigation of the distribution function in balance-equation theory, improved calculations for GaAs/AlGaAs heterojunctions, extension of the balance equations to an abitrary energy band and recent work on superlattice miniband transport.

Surface Modes of a Type II Semiconductor Superlattice

1988 ◽  
Vol 147 (1) ◽  
pp. 141-148 ◽  
Author(s):  
K. Yonashiro ◽  
T. Tomoyose ◽  
M. Yamshiro ◽  
M. Kobayashi
Keyword(s):  
Type Ii ◽  
Surface Modes ◽  
Semiconductor Superlattice

Thermally activated current–voltage asymmetry in quantum-well inter-subband photodetectors

1996 ◽  
Vol 74 (S1) ◽  
pp. 9-15 ◽  
Author(s):  
P. V. Kolev ◽  
M. J. Deen ◽  
H. C. Liu ◽  
Jianmeng Li ◽  
M. Buchanan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Transport ◽  
Transport Phenomena ◽  
Infrared Region ◽  
Avalanche Photodetectors ◽  
Long Wavelength ◽  
Hot Carrier ◽  
Thermally Activated ◽  
Current Voltage ◽  
Long Wavelength Infrared

Continuing research interest in quantum-well inter-subband-based devices can be associated with its prospects for numerous optoelectronic applications in the long wavelength infrared region. This paper presents experimentally measured field dependence of the thermally activated effective-barrier lowering in quantum-well inter-subband photodetectors (QWIPs). This barrier lowering is considered to be the main cause of the commonly observed asymmetry in the current–voltage characteristics of QWIPs. The research results presented here are important for understanding the factors determining the dark-current mechanisms that are crucial for further improvement in the characteristics of these devices. The study of current-carrier transport phenomena in a quantum well is also of interest for developing quantum-well lasers and avalanche photodetectors based on intraband processes, and also transistors based on ballistic or hot carrier transport phenomena.

Optical analysis of hot carrier distribution and transport properties in InP/AlInAs type II heterostructures

1992 ◽  
Vol 7 (3B) ◽  
pp. B271-B273 ◽  
Author(s):  
R Sakamoto ◽  
T Kohno ◽  
T Kamiyoshi ◽  
M Inoue ◽  
S Nakajima ◽  
...  
Keyword(s):  
Transport Properties ◽  
Type Ii ◽  
Optical Analysis ◽  
Carrier Distribution ◽  
Hot Carrier

Transient Hot-Carrier Transport

1991 ◽  
pp. 173-241
Author(s):  
David K. Ferry ◽  
Robert O. Grondin
Keyword(s):  
Carrier Transport ◽  
Hot Carrier

Hot Carrier Transport in SiGe/Si Two-Dimensional Hole Gases

1996 ◽  
pp. 449-452 ◽  
Author(s):  
G. Brunthaler ◽  
G. Bauer ◽  
G. Braithwaite ◽  
N. L. Mattey ◽  
P. Phillips ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Two Dimensional ◽  
Hot Carrier
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